Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer
Chia-Tze Huang, Yu-Cheng Chen, and Si-Chen Lee
The authors investigated the effect of a GaAs1−xSbx strain reducing layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs). The authors show that by increasing the Sb concentration to 20%, the resulting type-II structure provided a higher barrier for enhancing electron confinement, thus improving the spectral responsivity and operation temperature.
Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes
Dong-Yul Lee, Sang-Heon Han, Dong-Ju Lee, Jeong Wook Lee, Dong-Joon Kim, Young Sun Kim, and Sung-Tae Kim
The authors report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). LEDs with a p-AlGaN EBL exhibited reduced blueshift and a sublinear increase of full width at half maximum in their EL spectra at low current densities.
Giant electro-mechanical energy conversion in [011] cut ferroelectric single crystals
Wen D. Dong, Peter Finkel, Ahmed Amin, and Christopher S. Lynch
The authors demonstrate giant electro-mechanical energy conversion under a ferroelectric/ferroelectric phase transformation in [011] cut and poled lead titanate-based relaxor perovskite morphotropic single crystals. They found that under mechanical pre-stress, a relatively small oscillatory stress drives the material reversibly between rhombohedral and orthorhombic phases with a remarkably high polarization and strain jump induced at zero bias electric field and room temperature. The measured electrical output per cycle is more than an order of magnitude larger than that reported for linear piezoelectric materials.
Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors
Ju-Wan Lee and Jong-Ho Lee
The authors propose a model to explain the generation mechanism of appreciable random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of the high-k gate dielectric MOSFETs and explain uncorrelated RTNs in the GIDL and the gate ET currents.
Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
Yen-Kuang Kuo, Tsun-Hsin Wang, and Jih-Yuan Chang
The authors demonstrate that the performance of the blue InGaN LEDs is markedly improved when the GaN barriers are replaced by InGaN-AlGaN-InGaN barriers due to the appropriately modified energy band diagrams, high carrier injection efficiency, uniform distribution of carriers in the QWs, high radiative recombination rate in the active region, and small efficiency droop.
Announcements
Celebrating APL’s 50th Anniversary!
The first year of Applied Physics Letters ran approximately 15 articles every two weeks. Since the first issue, published in September 1962, the Journal has evolved to meet the changing needs of the scientific community and to follow the trends of the applied physics field. In the last issue of 2011, a week’s worth of Applied Physics Letters amounts to more than 160 articles across a broad range of topics, all highly-relevant and highly-cited.
Now, as APL enters its fiftieth year of serving the needs of physicists and scientists around the globe, we invite you to not only look back at the most highly cited papers from the past 50 years, but also to look forward to another 50 exciting years on the cutting edge of scientific discovery!
Read more
Increase in length limit for APL!
APL’s length limit will increase from three pages to 3500 words (approximately 4 printed pages). Check out the new length guidelines.
APL revamps table of content sections
As of 1 Jan 2012, APL will display a reorganized table of contents, including two brand new sections.
Read More.
- APS Annual Meeting: 27 February–2 March
Are you attending this year’s annual APS March meeting? AIP is, and we’re hosting a full schedule of fun starting Sunday evening. Stop by our booth (#101) to compete for XBox dominance and prizes, sign up for important AIP updates with the chance at an iPad 2, and get invitations to exclusive AIP events that week. We hope to see you all there! - AIP Publishing unveils new high profile cover design for its portfolio of journals
For more information and to preview the new AIP journal covers, visit: journals.aip.org. - Applied Physics Letters is adding new features in the journal website: Check out the “Most Read” and “Most Cited” in the journal homepage to find out the most downloaded articles for the month and papers that are most highly cited by other scientific researchers.
- Congratulations to APL Associate Editor, Orlando Auciello, newly-elected Vice-President/President-Elect of Materials Research Society.
- Congratulations to APL author, Professor John A. Rogers, on his selection for the 2011 recipient of the Lemelson-MIT Prize for innovation (2011), his list of publications in this journal can be accessed here.
- Journal metrics released by Thomson Reuters* show Applied Physics Letters to be the most highly cited journal in Applied Physics.
*2010 Journal Citation Reports® (Thomson Reuters, 2011) - Congratulations to APL author, Professor Jeremy John Baumberg, recently elected as a Fellow of the Royal Society, his list of publications in this journal can be accessed here.
- Applied Physics Letters article reporting on how to build a machine that uses contact electrification, or the triboelectric effect, to generate X-rays.
- Professor Minn-Tsong Lin joins Applied Physics Letters as new Associate Editor.
- Congratulations to APL Associate Editor, Hong-Jun Gao, the recipient of a Humboldt Research Award
- Congratulations to elected 2011 SPIE Fellow, APL Associate Editor, Christoph H. Grein
- REVTeX 4.1 released with AIP style files included
- Expanded Biophysics Coverage
Press Releases for the journal articles through AIP EurekAlert.
Your paper may receive additional exposure at this Spotlight Publication: APL: Organic Electronics & Photonics
Your paper may receive additional exposure in the Virtual Journal series.
- Scitation
- AIP Journals
- Applied Physics Reviews
- J. Appl. Phys.
- Rev. Sci. Instrum.
- AIP Conf. Proceedings in Materials Physics and Applications
- Physics Today
- Comput. Sci. & Eng.
- Physics Today Jobs
- PACS: Physics & Astronomy Classification Scheme ®
- FYI: The AIP Bulletin of Science Policy News
- DBIS: Discoveries & Breakthroughs Inside Science
- Physics Success Stories
- Inside Science News Service
- Physics News Update: The AIP Bulletin of Physics News
- AIP Statistical Research Center
- AIP Center for History of Physics










This Publication
Scitation
SPIN
Google Scholar
PubMed