Parasitic capacitance effect on programming performance of phase change random access memory devices

E. G. Yeo, L. P. Shi, R. Zhao, K. G. Lim, T. C. Chong, and I. Adesida

Phase change random access memory devices with larger parasitic capacitance were found to require higher applied voltage to amorphize due to a larger leakage current. The quenching time is also increased due to a longer voltage fall time during amorphization, resulting in a partially crystallized amorphous state.

Appl. Phys. Lett. 96, 043506 (2010)

Why nitrogen cannot lead to p-type conductivity in ZnO

J. L. Lyons, A. Janotti, and C. G. Van de Walle

Nitrogen is widely believed to act as a shallow acceptor in ZnO. First-principles calculations show that it is, in fact, a very deep acceptor with an ionization energy of 1.3 eV, eliminating the possibility of p-type conductivity. Reasons for the previous misinterpretations of experimental observations are discussed.

Appl. Phys. Lett. 95, 252105 (2009)

Mechanics of hemispherical electronics

Shuodao Wang, Jianliang Xiao, Inhwa Jung, Jizhou Song, Heung Cho Ko, Mark P. Stoykovich, Yonggang Huang, Keh-Chih Hwang, and John A. Rogers

A simple analytical model is established for the development of hemisphere electronics, which has many important applications in electronic-eye cameras and related curvilinear systems. The model provides a tool to define a pattern of photodetectors in the planar, as-fabricated layout to yield any desired spatial configuration on the hemisphere.

Appl. Phys. Lett. 95, 181912 (2009)