Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

Ju-Wan Lee and Jong-Ho Lee

The authors propose a model to explain the generation mechanism of appreciable random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of the high-k gate dielectric MOSFETs and explain uncorrelated RTNs in the GIDL and the gate ET currents.

Appl. Phys. Lett. 100, 033501 (2012)

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Yen-Kuang Kuo, Tsun-Hsin Wang, and Jih-Yuan Chang

The authors demonstrate that the performance of the blue InGaN LEDs is markedly improved when the GaN barriers are replaced by InGaN-AlGaN-InGaN barriers due to the appropriately modified energy band diagrams, high carrier injection efficiency, uniform distribution of carriers in the QWs, high radiative recombination rate in the active region, and small efficiency droop.

Appl. Phys. Lett. 100, 031112 (2012)

Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

JunShuai Xue, JinCheng Zhang, YaoWei Hou, Hao Zhou, JinFeng Zhang, and Yue Hao

The authors report successfully growing high quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD). The authors were able to obtain high values of electron mobility and two-dimensional-electron-gas density.

Appl. Phys. Lett. 100, 013507 (2012)

Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO₂

H. Peelaers, E. Kioupakis, and C. G. Van de Walle

The authors use first-principles computational methods to study free-carrier absorption (FCA) in n-type SnO₂, a commonly used transparent conducting oxides (TCO) material. The authors found that tin dioxide only weakly absorbs visible light, thus letting most light pass through, so that it is still a useful transparent contact. The transparency of SnO₂ declined when moving to other wavelength regions.

Appl. Phys. Lett. 100, 011914 (2012) | Read the press release

Photoinduced write-once read-many-times memory device based on DNA biopolymer nanocomposite

Yu-Chueh Hung, Wei-Ting Hsu, Ting-Yu Lin, and Ljiljana Fruk

The authors demonstrate a photoinduced write-once read-many-times (WORM) organic memory device based on DNA biopolymer nanocomposite. The DNA used was from salmon testes and the approach combines the metallic affinity of DNA with photoinduced nanoparticle synthesis and provides a facile and convenient route for preparation of optically controlled nanoparticle-DNA biopolymers.

Appl. Phys. Lett. 99, 253301 (2011) | Read the press releases: io9 | wired.com