Applied Physics Letters

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Research Highlights

Powering pacemakers from heartbeat vibrations using linear and nonlinear energy harvesters

M. Amin Karami and Daniel J. Inman

The authors design linear low frequency and nonlinear mono-stable and bi-stable energy harvesters to continuously recharge the batteries of the pacemakers by converting the vibrations from the heartbeats to electrical energy. They show that the proposed energy harvesters are robust to variation of heart rate and can meet the power requirement of pacemakers.

Appl. Phys. Lett. 100, 042901 (2012) | Read the press release

High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. A. Ott, and D. K. Sadana

The authors demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The authors used the technique to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate.

Appl. Phys. Lett. 100, 053901 (2012)

Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes

Ning Zhang, Zhe Liu, Tongbo Wei, Lian Zhang, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Jinmin Li, and Junxi Wang

The authors investigated the effect of a graded AlGaN electron blocking layer (GEBL) on the emission properties of InGaN/GaN multiple quantum wells light-emitting diode (LED). Their results indicate the adoption of GEBL in the LED enhances the electroluminescence intensity and reduces the wavelength blue-shift with increasing injection current.

Appl. Phys. Lett. 100, 053504 (2012)

Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs_1−xSb_x strain reducing layer

Chia-Tze Huang, Yu-Cheng Chen, and Si-Chen Lee

The authors investigated the effect of a GaAs_1−xSb_x strain reducing layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs). The authors show that by increasing the Sb concentration to 20%, the resulting type-II structure provided a higher barrier for enhancing electron confinement, thus improving the spectral responsivity and operation temperature.

Appl. Phys. Lett. 100, 043512 (2012)

Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes

Dong-Yul Lee, Sang-Heon Han, Dong-Ju Lee, Jeong Wook Lee, Dong-Joon Kim, Young Sun Kim, and Sung-Tae Kim

The authors report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). LEDs with a p-AlGaN EBL exhibited reduced blueshift and a sublinear increase of full width at half maximum in their EL spectra at low current densities.

Appl. Phys. Lett. 100, 041119 (2012)

More Research Highlights

Announcements

Celebrating APL’s 50th Anniversary!

The first year of Applied Physics Letters ran approximately 15 articles every two weeks. Since the first issue, published in September 1962, the Journal has evolved to meet the changing needs of the scientific community and to follow the trends of the applied physics field. In the last issue of 2011, a week’s worth of Applied Physics Letters amounts to more than 160 articles across a broad range of topics, all highly-relevant and highly-cited.

Now, as APL enters its fiftieth year of serving the needs of physicists and scientists around the globe, we invite you to not only look back at the most highly cited papers from the past 50 years, but also to look forward to another 50 exciting years on the cutting edge of scientific discovery!
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Increase in length limit for APL!

APL’s length limit will increase from three pages to 3500 words (approximately 4 printed pages). Check out the new length guidelines.

APL revamps table of content sections

As of 1 Jan 2012, APL will display a reorganized table of contents, including two brand new sections.
Read More.

APS Annual Meeting: 27 February–2 March
Are you attending this year’s annual APS March meeting? AIP is, and we’re hosting a full schedule of fun starting Sunday evening. Stop by our booth (#101) to compete for XBox dominance and prizes, sign up for important AIP updates with the chance at an iPad 2, and get invitations to exclusive AIP events that week. We hope to see you all there!
AIP Publishing unveils new high profile cover design for its portfolio of journals
For more information and to preview the new AIP journal covers, visit: journals.aip.org.
Applied Physics Letters is adding new features in the journal website: Check out the “Most Read” and “Most Cited” in the journal homepage to find out the most downloaded articles for the month and papers that are most highly cited by other scientific researchers.
Congratulations to APL Associate Editor, Orlando Auciello, newly-elected Vice-President/President-Elect of Materials Research Society.
Congratulations to APL author, Professor John A. Rogers, on his selection for the 2011 recipient of the Lemelson-MIT Prize for innovation (2011), his list of publications in this journal can be accessed here.
Journal metrics released by Thomson Reuters* show Applied Physics Letters to be the most highly cited journal in Applied Physics.
*2010 Journal Citation Reports^® (Thomson Reuters, 2011)
Congratulations to APL author, Professor Jeremy John Baumberg, recently elected as a Fellow of the Royal Society, his list of publications in this journal can be accessed here.
Applied Physics Letters article reporting on how to build a machine that uses contact electrification, or the triboelectric effect, to generate X-rays.
Professor Minn-Tsong Lin joins Applied Physics Letters as new Associate Editor.
Congratulations to APL Associate Editor, Hong-Jun Gao, the recipient of a Humboldt Research Award
Congratulations to elected 2011 SPIE Fellow, APL Associate Editor, Christoph H. Grein
REVTeX 4.1 released with AIP style files included
Expanded Biophysics Coverage