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A Light Emitting Device Made from Thin Zirconium-doped Hafnium Oxide High-k Dielectric Film with or without an Embedded Nanocrystal Layer
Yue Kuo and Chi-Chou Lin
This paper studies the properties of a solid state light emitting device composed of a 10 nm thickness zirconium-doped hafnium oxide high-k gate dielectric with or without an embedded nanocrystalline ZnO layer. The advantage of this type of solid state LED is its simplicity, low cost and IC compatible process, and that it can be fabricated with various types of dielectric and embedded nanocrystaline materials, making it an excellent candidate for a variety of applications.
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