• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App

You are not logged in Access to this article requires a subscription or AIP Article Pack, or rent it for . Log In

Applied Physics Letters / Browse Journal / Volume 75 / Issue 8 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 75, 1107 (1999); doi:10.1063/1.124611 (3 pages)

Nanomachining of mesoscopic electronic devices using an atomic force microscope

H. W. Schumacher1, U. F. Keyser1, U. Zeitler1, R. J. Haug1, and K. Eberl2

1Institut für Festkörperphysik, Universität Hannover, Appelstraße 2, 30167 Hannover, Germany Map This map
2Max-Planck-Institut für Festkörperforschung, Heisenbergstr.1, D-70569 Stuttgart, Germany Map This map

(Received 28 April 1999; accepted 25 June 1999)

Full Text: Read Online (HTML) | Download PDF (202 KB) | NEW! Rent Article () DeepDyve Renting |
Add to Cart (US$28) |
View Cart
An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

two-dimensional electron gas, III-V semiconductors, gallium arsenide, aluminium compounds, atomic force microscopy, nanotechnology, machining, mesoscopic systems, quantum interference devices, single electron transistors, semiconductor heterojunctions

PACS

  • 81.07.-b

    Nanoscale materials and structures: fabrication and characterization

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 85.35.-p

    Nanoelectronic devices

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 81.05.Ea

    III-V semiconductors

  • 73.23.-b

    Electronic transport in mesoscopic systems

  • 85.35.Ds

    Quantum interference devices

  • 85.35.Gv

    Single electron devices

ARTICLE DATA

Permalink
http://link.aip.org/link/APPLAB/v75/i8/p1107/s1

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
  1. See as a review, e.g., Special Issue on Nanometer-Scale Science and Technology, edited by C. R. K Marrian [Proceedings of the IEEE 85, 481 (1997)].
  2. T. Sumomogi, T. Endo, K. Kuwahara, R. Kaneko, and T. Miyamoto, J. Vac. Sci. Technol. B 12, 1876 (1994)
    B. Irmer, R. H. Blick, F. Simmel, W. Gödel, H. Lorenz, and J. P. Kotthaus, Appl. Phys. Lett. 73, 2051 (1998)APPLAB000073000014002051000001.
  3. X. Jin and W. N. Unertl, Appl. Phys. Lett. 61, 657 (1992)APPLAB000061000006000657000001.
  4. S. Hu, A. Hamidi, S. Altmeyer, T. Köster, B. Spangenberg, and H. Kurz, J. Vac. Sci. Technol. B 16, 2822 (1998).
  5. R. Magno and B. R. Bennett, Appl. Phys. Lett. 70, 1855 (1997)APPLAB000070000014001855000001.
  6. See as a review, e.g., U. Meirav and E. B. Foxman, Semicond. Sci. Technol. 10, 255 (1995).
  7. M. Ishii and K. Matsumoto, Jpn. J. Appl. Phys., Part 1 34, 1329 (1995)
    R. Held, T. Vancura, T. Heinzel, K. Ensslin, M. Holland, and W. Wegscheider, Appl. Phys. Lett. 73, 262 (1998)APPLAB000073000002000262000001.
  8. M. Wendel, S. Kühn, H. Lorenz, J. P. Kotthaus, and M. Holland, Appl. Phys. Lett. 65, 1775 (1994)APPLAB000065000014001775000001.
  9. J. Cortes Rosa, M. Wendel, H. Lorenz, J. P. Kotthaus, M. Thomas, and H. Kroemer, Appl. Phys. Lett. 73, 2684 (1998)APPLAB000073000018002684000001.
  10. Noncontact Si AFM tips, Nanosensors.
  11. H. van Houten, B. J. van Wees, M. G. J. Heijman, and J. P. André, Appl. Phys. Lett. 49, 1781 (1986)APPLAB000049000026001781000001.
  12. A. D. Wieck and K. Ploog, Appl. Phys. Lett. 56, 928 (1990)APPLAB000056000010000928000001.

For access to citing articles, you need to log in.



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed Articles

  1. Nanomachining of mesoscopic electronic devices using an atomic force microscope
Go to AIP Home
Copyright © American Institute of Physics
close