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Appl. Phys. Lett. 75, 1110 (1999); http://dx.doi.org/10.1063/1.124612 (3 pages)

Refractive index and hygroscopic stability of AlxGa1−xAs native oxides

D. C. Hall1, H. Wu1, L. Kou1, Y. Luo1, R. J. Epstein1, O. Blum2, and H. Hou2

1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
2Sandia National Laboratory, Albuquerque, New Mexico 87185

(Received 17 May 1999; accepted 25 June 1999)

We present prism coupling measurements on AlxGa1−xAs native oxides showing the dependence of refractive index on composition (0.3 ⩽ x ⩽ 0.97), oxidation temperature (400 ⩽ T ⩽ 500), and carrier gas purity. Index values range from n = 1.490 (x = 0.9, 400 °C) to 1.707 (x = 0.3, 500 °C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of AlxGa1−xAs (x ⩽ 0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O2 in the N2+H2O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (AlxGa1−x)2O3 oxide phase. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.66.Fd

    III-V semiconductors

  • 81.05.Ea

    III-V semiconductors

  • 81.65.Mq

    Oxidation

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 68.43.-h

    Chemisorption/physisorption: adsorbates on surfaces

  • 68.03.Fg

    Evaporation and condensation of liquids

  • 68.43.Mn

    Adsorption kinetics

  • 61.66.Bi

    Elemental solids

  • 61.66.Dk

    Alloys

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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