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Applied Physics Letters / Browse Journal / Volume 76 / Issue 4 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 76, 457 (2000); doi:10.1063/1.125786 (3 pages)

Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system

U. F. Keyser1, H. W. Schumacher1, U. Zeitler1, R. J. Haug1, and K. Eberl2

1Institut für Festkörperphysik, Universität Hannover, Appelstrasse 2, 30167 Hannover, Germany Map This map
2Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany Map This map

(Received 4 August 1999; accepted 24 November 1999)

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The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling barriers. The height of the barriers is determined by measuring the thermally activated current. By varying the oxidation current, the barrier heights can be tuned between a few meV and more than 100 meV. Using these barriers as tunneling elements, a side gated single-electron transistor is fabricated. © 2000 American Institute of Physics.

© 2000 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, aluminium compounds, single electron transistors, two-dimensional electron gas, anodisation, oxidation, Coulomb blockade, tunnelling, III-V semiconductors, atomic force microscopy, mesoscopic systems

PACS

  • 85.35.Gv

    Single electron devices

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 81.65.Mq

    Oxidation

  • 73.23.Hk

    Coulomb blockade; single-electron tunneling

  • 07.79.Lh

    Atomic force microscopes

ARTICLE DATA

Permalink
http://link.aip.org/link/APPLAB/v76/i4/p457/s1

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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