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Applied Physics Letters / Volume 76 / Issue 4 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 76, 460 (2000); http://dx.doi.org/10.1063/1.125787 (3 pages)

Electronic bistability in electrochemically self-assembled quantum dots: A potential nonvolatile random access memory

N. Kouklin1, S. Bandyopadhyay1, S. Tereshin2, A. Varfolomeev2, and D. Zaretsky2

1Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511
2Kurchatov Institute, Kurchatov Square, Moscow, Russia

(Received 30 September 1999; accepted 29 November 1999)

An electronic bistability has been observed in a two-dimensional spatially ordered array of 10 nm quantum dots self-assembled by electrodepositing CdS in nanoporous anodic alumite film. The current–voltage characteristic of the array shows switching between two stable conductance states, which can be controlled by an external bias. The bistability is observed when current flows laterally between two contacts on the top surface of the array, and also when current flows vertically between a top contact and the bottom (conducting) substrate. If the system is left in one conductance state, it remains there for at least 180 h and possibly much longer, until switched to the other state by an external bias. Such an effect may find applications in inexpensive, ultradense nonvolatile static random access memory. © 2000 American Institute of Physics.

© 2000 American Institute of Physics

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KEYWORDS and PACS

Keywords

cadmium compounds, II-VI semiconductors, semiconductor quantum dots, electrical conductivity transitions, electrodeposition, self-assembly, arrays, SRAM chips

PACS

  • 73.61.Ga

    II-VI semiconductors

  • 72.60.+g

    Mixed conductivity and conductivity transitions

  • 81.15.Pq

    Electrodeposition, electroplating

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

  • 84.30.Sk

    Pulse and digital circuits

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.125787

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    See, for example, D. AlMawlawi, N. Coombs, and M. Moskovitz, J. Appl. Phys. 70, 4421 (1991)JAPIAU000070000008004421000001.

    S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).

    M. H. Cohen and H. Fritzche, Phys. Rev. Lett. 22, 1065 (1969).

    K. F. Brennan, Appl. Phys. Lett. 57, 1114 (1990)APPLAB000057000011001114000001.


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