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Applied Physics Letters / Volume 77 / Issue 24 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 77, 3995 (2000); http://dx.doi.org/10.1063/1.1332406 (3 pages)

Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching

C. Z. Li, H. X. He, and N. J. Tao

Department of Physics, Florida International University, Miami, Florida 33199

(Received 16 August 2000; accepted 23 October 2000)

We have studied electron tunneling across the gap between two electrodes as the gap is varied by electrodeposition and etching. The tunneling current tends to change in a stepwise fashion, corresponding to a discrete change of the gap width. The stepwise change is due to the discrete nature of atoms and a series of structural relaxations of the atoms at the electrodes between stable configurations upon deposition and etching. By stabilizing the tunneling current on various steps using a feedback loop, we have demonstrated that stable molecular-scale gaps can be fabricated with subangstrom precision. © 2000 American Institute of Physics.

© 2000 American Institute of Physics

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KEYWORDS and PACS

Keywords

molecular electronics, nanotechnology, electrodeposition, etching, tunnelling

PACS

  • 73.40.Rw

    Metal-insulator-metal structures

  • 73.40.Gk

    Tunneling

  • 81.07.-b

    Nanoscale materials and structures: fabrication and characterization

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 85.35.-p

    Nanoelectronic devices

  • 81.15.Pq

    Electrodeposition, electroplating

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1332406

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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