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Applied Physics Letters / Volume 87 / Issue 25 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 87, 253106 (2005); doi:10.1063/1.2149980 (3 pages)

Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

Haiqing Liu, Christian H. Reccius, and H. G. Craighead

School of Applied and Engineering Physics and Nanobiotechnology Center, Cornell University, Ithaca, New York 14853

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(Received 15 July 2005; accepted 26 October 2005; published online 13 December 2005)

We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100–500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2/Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2/V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.

© 2005 American Institute of Physics

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KEYWORDS and PACS

Keywords

polymer fibres, field effect transistors, nanostructured materials

PACS

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2149980

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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