• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App

You are not logged in Access to this article requires a subscription or AIP Article Pack, or rent it for . Log In

Applied Physics Letters / Browse Journal / Volume 87 / Issue 25 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 87, 253107 (2005); doi:10.1063/1.2146065 (3 pages)

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Siyuranga O. Koswatta1, Mark S. Lundstrom1, M. P. Anantram2, and Dmitri E. Nikonov3

1School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907-1285 Map This map
2Center for Nanotechnology, NASA Ames Research Center, Mail Stop 229–1, Moffett Field, California 94035-1000 Map This map
3Technology and Manufacturing Group, Intel Corp., SC1-05, Santa Clara, California 95052 Map This map

(Received 30 June 2005; accepted 20 October 2005; published online 13 December 2005)

Full Text: Read Online (HTML) | Download PDF (257 KB) | NEW! Rent Article () DeepDyve Renting |
Add to Cart (US$28) |
View Cart
Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the nonequilibrium Green’s functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau–Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40 mV/decade despite the effect of phonon scattering.

© 2005 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

carbon nanotubes, MOSFET, tunnelling, Green's function methods, electron-phonon interactions, electrical conductivity

PACS

ARTICLE DATA

Permalink
http://link.aip.org/link/APPLAB/v87/i25/p253107/s1

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
  1. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
  2. S. Heinze, J Tersoff, R. Martel, V. Derycke, J Appenzeller, and P. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
  3. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and P. Avouris, Phys. Rev. Lett. 89, 126801 (2002).
  4. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
  5. J. Guo, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 51, 172 (2004).
  6. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram, Int. J. Multiscale Comput. Eng. 2, 257 (2004).
  7. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, Nano Lett. 4, 1319 (2004).
  8. J. Guo and M. Lundstrom, Appl. Phys. Lett. 86, 193103 (2005)APPLAB000086000019193103000001.
  9. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and P. Avouris, Phys. Rev. Lett. 87, 256805 (2001).
  10. L. D. Landau and E. M. Lifshitz, Quantum Mechanics: Nonrelativistic Theory, 3rd ed. (Butterworth–Heinemann, London, 1981), Chap. VII.
  11. J. Appenzeller, Y.-M. Lin, J. Knoch, and P. Avouris, Phys. Rev. Lett. 93, 196805 (2004).
  12. S. Datta, Quantum Transport: Atom to Transistor, 2nd ed. (Cambridge University Press, Cambridge, MA, 2005).
  13. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, J. Appl. Phys. 92, 3730 (2002)JAPIAU000092000007003730000001.
  14. A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal, J. Appl. Phys. 91, 2343 (2002)JAPIAU000091000004002343000001.
  15. G. D. Mahan, Phys. Rev. B 68, 125409 (2003).
  16. N. S. Wingreen, K. W. Jacobsen, and J. W. Wilkins, Phys. Rev. Lett. 61, 1396 (1988).
  17. L. I. Glazman and R. I. Shekhter, Solid State Commun. 66, 65 (1988).

For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed Articles

  1. Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
  2. Metal–polymer composite with nanostructured filler particles and amplified physical properties
  3. Nanomachining of mesoscopic electronic devices using an atomic force microscope
Go to AIP Home
Copyright © American Institute of Physics
close