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Applied Physics Letters / Volume 88 / Issue 10 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 88, 102104 (2006); doi:10.1063/1.2183371 (3 pages)

Reactive metal contact at indium–tin–oxide/self-assembled monolayer interfaces

Jeong Ho Cho1, Yeong Don Park1, Do Hwan Kim1, Woong-Kwon Kim2, Ho Won Jang2, Jong-Lam Lee2, and Kilwon Cho1

1Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
2Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

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(Received 2 June 2005; accepted 1 February 2006; published online 8 March 2006)

With the aim of improving the electrical and adhesion properties of the indium–tin–oxide (ITO) electrode/organic interface, we tested Cl- and CF3-terminated self-assembled monolayers (SAMs), which react with the indium atoms of the electrode, and compared the results to those obtained using a CH3-terminated SAM. The contact resistance of the interface between the Cl-terminated surface and the ITO electrode (1.5 kΩ) was found to be much lower than that of the interface between the ITO and the CF3-terminated surface (21.3 kΩ), which can be attributed to the higher dipole moment of the In–Cl complex compared to the In–F complex. In the ITO films deposited on the CH3-terminated surface, the contact resistance (138.0 kΩ) was much higher than those of the reactive metal contacts because the ITO thin film deposited on the CH3-terminated surface does not react with the SAM.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, monolayers, self-assembly, adhesion, organic compounds, contact resistance, electrical contacts

PACS

  • 73.40.Cg

    Contact resistance, contact potential

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2183371

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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