Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery

Zhou, Yi; Li, Mingyu; Wang, Dake; Ahyi, Claude; Tin, Chin-Che; Williams, John; Park, Minseo; Williams, N. Mark; Hanser, Andrew

doi:doi:10.1063/1.2186368

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A vertical Schottky diode rectifier was fabricated using a bulk n−GaN wafer. Pt Schottky contacts were prepared on the Ga face and full backside ohmic contact was prepared on the N face by using Ti/Al. The root mean square surface roughnesses of the Ga and N faces are 0.61 and 4.7 nm, respectively. A relatively high breakdown field of 5.46 kV/cm was achieved with no additional edge termination. The breakdown field decreases as the size of the device increases. The background electron concentration of the bulk GaN wafer was low (5×10¹⁵ cm⁻³), which may lead to a relatively high breakdown field even with no special edge termination. The forward turn-on voltage was as low as 2.4 V at the current density of 100 A/cm². The device exhibited an ultrafast reverse recovery characteristics (reverse recovery time <20 ns).

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, wide band gap semiconductors, Schottky diodes, solid-state rectifiers, ohmic contacts, surface roughness, electron density

PACS

85.30.Kk

Junction diodes
85.30.Hi

Surface barrier, boundary, and point contact devices

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http://dx.doi.org/10.1063/1.2186368

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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