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Appl. Phys. Lett. 88, 181903 (2006); http://dx.doi.org/10.1063/1.2199451 (3 pages)

Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001)

D. A. Schmidt1, Taisuke Ohta2, C.-Y. Lu2, Aaron A. Bostwick3, Q. Yu3, Eli Rotenberg4, F. S. Ohuchi2, and Marjorie A. Olmstead5

1Department of Physics University of Washington (UW), Seattle, Washington 98195-1560 and Center for Nanotechnology (CNT), University of Washington (UW), Seattle, Washington 98195-1560
2Department of Materials Science and Engineering, UW, Seattle, Washington 98195-2120 and CNT, UW, Seattle, Washington 98195-2120
3Department of Physics, UW, Seattle, Washington 98195-1560
4Advanced Light Source, Berkeley, California 94720
5Department of Physics, UW, Seattle, Washington 98195-1560 and CNT, UW, Seattle, Washington 98195-1560

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(Received 9 December 2005; accepted 12 March 2006; published online 2 May 2006)

We report controlled laminar growth of a crystalline transition metal oxide on Si(001) without SiOx or silicide formation by utilizing the chalcogenide semiconductor gallium sesquiselenide (Ga2Se3) as a nonreactive buffer layer. Initial nucleation of both pure and Co-doped anatase (TiO2) is along Ga2Se3 nanowire structures, coalescing to a flat, multidomain film within two molecular layers. Arsenic-terminated Si(001) [Si(001):As] is stable against pure O2, but oxidizes when both Ti and O2 are present. The SiTiO2 valence band offset using either buffer layer is about 2.8 eV, producing a staggered band alignment.

© 2006 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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