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Applied Physics Letters / Volume 90 / Issue 23 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 90, 232112 (2007); http://dx.doi.org/10.1063/1.2747183 (3 pages)

Study of the thermal stress in a Pb-free half-bump solder joint under current stressing

B. Y. Wu1, Y. C. Chan1, H. W. Zhong1, M. O. Alam2, and J. K. L. Lai3

1Department of Electronic Engineering, City University of Hong Kong, Hong Kong, China
2School of Computing and Mathematical Sciences, The University of Greenwich, London, United Kingdom
3Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China

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(Received 15 January 2007; accepted 16 May 2007; published online 7 June 2007)

The thermal stress in a Sn3.5Ag1Cu half-bump solder joint under a 3.82×108 A/m2 current stressing was analyzed using a coupled-field simulation. Substantial thermal stress accumulated around the Al-to-solder interface, especially in the Ni+(Ni,Cu)3Sn4 layer, where a maximal stress of 138 MPa was identified. The stress gradient in the Ni layer was about 1.67×1013 Pa/m, resulting in a stress migration force of 1.82×10−16 N, which is comparable to the electromigration force, 2.82×10−16 N. Dissolution of the Ni+(Ni,Cu)3Sn4 layer, void formation with cracks at the anode side, and extrusions at the cathode side were observed.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

tin alloys, silver alloys, copper alloys, solders, thermal stresses, dissolving, voids (solid), cracks

PACS

  • 81.05.Bx

    Metals, semimetals, and alloys

  • 81.40.Np

    Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

  • 62.20.M-

    Structural failure of materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2747183

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    K. N. Tu, J. Appl. Phys. 94, 5451 (2003)JAPIAU000094000009005451000001.

    A. T. Huang, A. M. Gusak, K. N. Tu, and Y. S. Lai, Appl. Phys. Lett. 88, 141911 (2006)APPLAB000088000014141911000001.

    S. H. Chiu, T. L. Shao, C. Chen, D. J. Yao, and C. Y. Hsu, Appl. Phys. Lett. 88, 022110 (2006)APPLAB000088000002022110000001.

    D. C. Yeh and H. B. Huntington, Phys. Rev. Lett. 53, 1469 (1984).


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