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Appl. Phys. Lett. 90, 263107 (2007); http://dx.doi.org/10.1063/1.2742323 (3 pages)

Interfaces in semiconductor/metal radial superlattices

Christoph Deneke1, Wilfried Sigle2, Ulrike Eigenthaler2, Peter A. van Aken2, Gisela Schütz2, and Oliver G. Schmidt3

1Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
2Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, D-70569 Stuttgart, Germany
3Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

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(Received 27 January 2007; accepted 30 April 2007; published online 26 June 2007)

Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAs/Ti/Au as well as InAlGaAs/GaAs/Cr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.

© 2007 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 68.65.Cd

    Superlattices

  • 68.35.Ct

    Interface structure and roughness

  • 82.80.Ej

    X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

  • 79.20.Uv

    Electron energy loss spectroscopy

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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