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Applied Physics Letters / Volume 91 / Issue 1 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 91, 013112 (2007); http://dx.doi.org/10.1063/1.2752730 (3 pages)

Three-dimensional isocompositional profiles of buried SiGe/Si(001) islands

G. Katsaros1, M. Stoffel1, A. Rastelli1, O. G. Schmidt1, K. Kern1, and J. Tersoff2

1Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany
2IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598

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(Received 8 February 2007; accepted 4 June 2007; published online 6 July 2007)

The authors investigate the composition profile of SiGe islands after capping with Si to form quantum dots, using a two step etching procedure and atomic force microscopy. Initially, the Si capping layers are removed by etching selectively Si over Ge and then the composition of the disclosed islands is addressed by selectively etching Ge over Si. For samples grown at 580 °C the authors show that even when overgrowth leads to a flat Si surface and the islands undergo strong morphological changes, a Ge-rich core region is still preserved in the dot. At high growth and overgrowth temperatures (740 °C), the experiments show that the newly formed base of the buried islands is more Si rich than their top. Furthermore, the authors find that for the growth conditions used, no lateral motion takes place during capping.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

Ge-Si alloys, silicon, semiconductor materials, elemental semiconductors, buried layers, island structure, semiconductor quantum dots, etching, atomic force microscopy, doping profiles, high-temperature effects

PACS

  • 61.72.S-

    Impurities in crystals

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 81.65.Cf

    Surface cleaning, etching, patterning

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2752730

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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