Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric

Yang, M.; Wang, S. J.; Peng, G. W.; Wu, R. Q.; Feng, Y. P.

doi:doi:10.1063/1.2790075

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Spectroscopic study of dielectric barrier discharges in cellular polypropylene ferroelectrets

The transient light emission from the dielectric barrier discharges (DBDs) in cellular polypropylene ferroelectrets subjected to high electric poling fields was spectroscopically measured. The spectrum shows strong emission from the second positive system of molecular nitrogen, N2(C 3Πu)→N2(B 3Πg), and the first negative system of N2+, N2+(B 2Σu+)→N2+(X 2Σg+), consistent with a DBD in air. When a dc voltage is applied stepwise to the ferroelectret film, light emission starts above a threshold, ...

Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation

Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of...

First-principles calculations based on density-functional theory and local-density approximation were carried out to investigate intrinsic defect properties in β-Ge₃N₄. It was found that nitrogen vacancies are the main source of intrinsic defects in Ge₃N₄ due to their low formation energy. The N vacancies might become charge trapping centers since they induce energy levels near the Ge conduction band edge and in the middle of the Ge₃N₄ band gap. The formation energy of intrinsic defects in Ge₃N₄ is sensitive to N chemical potential, and N-rich ambient is favorable to reduce the concentration of N vacancies.

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KEYWORDS and PACS

Keywords

ab initio calculations, chemical potential, colour centres, conduction bands, density functional theory, energy gap, germanium compounds, vacancies (crystal)

PACS

71.55.Ht

Other nonmetals
71.20.Ps

Other inorganic compounds
71.15.Mb

Density functional theory, local density approximation, gradient and other corrections
61.72.J-

Point defects and defect clusters
65.40.G-

Other thermodynamical quantities

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http://link.aip.org/link/doi/10.1063/1.2790075

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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