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Applied Physics Letters / Volume 91 / Issue 17 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 91, 173115 (2007); http://dx.doi.org/10.1063/1.2802555 (3 pages)

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

J. J. Zhang1, M. Stoffel1, A. Rastelli2, O. G. Schmidt2, V. Jovanović3, L. K. Nanver3, and G. Bauer4

1Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany
2Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany and Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
3Laboratory of Electronic Components Technology and Materials, DIMES, Delft University of Technology, 2628 CT Delft, The Netherlands
4Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria

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(Received 8 July 2007; accepted 5 October 2007; published online 24 October 2007)

The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

Ge-Si alloys, island structure, semiconductor growth, semiconductor materials, semiconductor quantum dots, surface morphology

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2802555

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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