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Applied Physics Letters / Volume 92 / Issue 16 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 92, 163308 (2008); http://dx.doi.org/10.1063/1.2916901 (3 pages)

Air-stable organic-based semiconducting room temperature thin film magnet for spintronics applications

Elin Carlegrim1, Anna Kanciurzewska1,2, Per Nordblad3, and Mats Fahlman1

1Department of Science and Technology (ITN), Linköping University, S-601 74 Norrköping, Sweden
2Applied Photochemistry Laboratory, Faculty of Chemistry, Adam Mickiewicz University, Grunwaldzka 6, 60-780 Poznań, Poland
3Department of Engineering Sciences, Uppsala University, S-751 21 Uppsala, Sweden

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(Received 10 March 2008; accepted 3 April 2008; published online 25 April 2008)

Herein, we report on a preparation method of vanadium tetracyanoethylene, V(TCNE)x, an organic-based semiconducting room temperature thin film magnet. Previously, this compound has been reported to be extremely air sensitive but this preparation method leads to V(TCNE)x, which can retain its magnetic ordering at least several weeks in air. The electronic structure has been studied by photoelectron spectroscopy and the magnetic properties by superconducting quantum interference device. The properties mentioned above, in combination with complete spin polarization, makes this air-stable V(TCNE)x a very promising material for spintronic devices.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

electronic structure, magnetic semiconductors, magnetic thin films, magnetoelectronics, organic semiconductors, photoelectron spectra, semiconductor thin films, spin polarised transport

PACS

  • 75.70.Ak

    Magnetic properties of monolayers and thin films

  • 75.50.Pp

    Magnetic semiconductors

  • 71.20.Rv

    Polymers and organic compounds

  • 73.61.Ph

    Polymers; organic compounds

  • 79.60.Bm

    Clean metal, semiconductor, and insulator surfaces

  • 72.25.Dc

    Spin polarized transport in semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2916901

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
XPS core levels of V(TCNE)x prepared by PVD and CVD, respectively. (a) C (1s). (b) N (1s). The chemical structure of TCNE is inserted in (a).

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
HeI UPS valence region electronic structure of V(TCNE)x prepared by PVD and CVD, respectively.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
SQUID measurements of V(TCNE)x prepared by PVD. (a) Hysteresis curve at 200 K. (b) Temperature dependence at 20 Oe applied field (zero field cooled).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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