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Applied Physics Letters / Volume 93 / Issue 1 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 93, 012105 (2008); http://dx.doi.org/10.1063/1.2957033 (3 pages)

Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

T. P. Martin1, A. Szorkovszky1, A. P. Micolich1, A. R. Hamilton1, C. A. Marlow2, H. Linke2, R. P. Taylor2, and L. Samuelson3

1School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
2Department of Physics, University of Oregon, Eugene, Oregon 97403, USA
3Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden

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(Received 30 April 2008; accepted 12 June 2008; published online 9 July 2008)

The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Landé g-factor from |g∗| = 3.8±0.2 for the third subband to |g∗| = 5.8±0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, gallium compounds, g-factor, III-V semiconductors, indium compounds, quantum point contacts, semiconductor quantum wells, spin polarised transport, Zeeman effect

PACS

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

  • 72.25.Dc

    Spin polarized transport in semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2957033

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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