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Applied Physics Letters / Browse Journal / Volume 93 / Issue 3 / PLASMAS AND ELECTRICAL DISCHARGES

Appl. Phys. Lett. 93, 031502 (2008); doi:10.1063/1.2961016 (3 pages)

Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

J. Asmussen1,2, T. A. Grotjohn2, T. Schuelke1, M. F. Becker1, M. K. Yaran1, D. J. King1, S. Wicklein1, and D. K. Reinhard2

1Fraunhofer USA Inc., Center for Coatings and Laser Applications, Michigan State University, East Lansing, Michigan 48824-1226, USA Map This map
2Michigan State University, East Lansing, Michigan 48824-1226, USA Map This map

(Received 23 May 2008; accepted 1 July 2008; published online 23 July 2008)

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A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6–8% of CH4/H2, microwave input powers of 10–11.5 kW, substrate temperatures of 1100–1200 °C, and pressures of 110–135 Torr. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of 14–21 μm/h. Multiple deposition runs totaling 145 h of deposition time added 1.8–2.5 mm of diamond material to each of the 70 seed crystals.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

diamond, epitaxial growth, epitaxial layers, plasma CVD

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 68.55.aj

    Insulators

ARTICLE DATA

Permalink
http://link.aip.org/link/APPLAB/v93/i3/p031502/s1

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
  1. T. S. McCauley and Y. K. Vohra, Appl. Phys. Lett. 66, 1486 (1995)APPLAB000066000012001486000001.
  2. C.-S. Yan, Y. K. Vohra, H.-K. Mao, and R. L. Hemley, Proc. Natl. Acad. Sci. U.S.A. 99, 12523 (2002).
  3. R. L. Hemley, H.-K. Mao, C.-S. Yan, and Y. K. Vohra, U.S. Patent No. 6,858,078 (22 February 2005).
  4. Y. Mokuno, A. Chayahara, Y. Soda, Y. Horino, and N. Fujimori, Diamond Relat. Mater. 14, 1743 (2005).
  5. A. Tallaire, J. Achard, F. Silva, R. S. Sussmann, and A. Gicquel, Diamond Relat. Mater. 14, 249 (2005).
  6. H. Sternschulte, T. Bauer, M. Schreck, and B. Stritzker, Diamond Relat. Mater. 15, 542 (2006).
  7. O. A. Williams and R. Jackman, Diamond Relat. Mater. 13, 557 (2004).
  8. R. Ramamurti, M. Becker, T. Schuelke, T. Grotjohn, D. Reinhard, and J. Asmussen, Diamond Relat. Mater. 17, 481 (2008).
  9. K. P. Kuo and J. Asmussen, Diamond Relat. Mater. 6, 1097 (1997).
  10. S. S. Zuo, M. K. Yaran, T. A. Grotjohn, D. K. Reinhard, and J. Asmussen, Diamond Relat. Mater. 17, 300 (2008).
  11. D. T. Tran, W.-S. Huang, J. Asmussen, T. A. Grotjohn, and D. K. Reinhard, New Diamond Front. Carbon Technol. 16, 281 (2006).
  12. D. J. King, M. K. Yaran, T. Schuelke, T. A. Grotjohn, D. K. Reinhard, and J. Asmussen, Diamond Relat. Mater. 17, 520 (2008).
  13. A. Tallaire, M. Kasu, K. Ueda, and T. Makimoto, Diamond Relat. Mater. 17, 60 (2008).

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