Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

Korytov, M.; Benaissa, M.; Brault, J.; Huault, T.; Neisius, T.; Vennéguès, P.

doi:doi:10.1063/1.3115027

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The impact of the capping process on the structural and morphological properties of GaN quantum dots (QDs) grown on fully relaxed Al_0.5Ga_0.5N templates was studied by transmission electron microscopy. A morphological transition between the surface QDs, which have a pyramidal shape, and the buried ones, which have a truncated pyramid shape, is evidenced. This shape evolution is accompanied by a volume change: buried QDs are bigger than surface ones. Furthermore a phase separation into Al_0.5Ga_0.5N barriers was observed in the close vicinity of buried QDs. As a result, the buried QDs were found to be connected with the nearest neighbors by thin Ga-rich zones, whereas Al-rich zones are situated above the QDs.

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, molecular beam epitaxial growth, phase separation, semiconductor growth, semiconductor quantum dots, transmission electron microscopy, wide band gap semiconductors

PACS

81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
64.75.Qr

Phase separation and segregation in semiconductors
81.07.Ta

Quantum dots

ARTICLE DATA

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http://dx.doi.org/10.1063/1.3115027

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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