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Applied Physics Letters / Volume 94 / Issue 6 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 94, 062506 (2009); http://dx.doi.org/10.1063/1.3079664 (3 pages)

Local stress engineering of magnetic anisotropy in soft magnetic thin films

Norbert Martin1, Jeffrey McCord1, Andreas Gerber2, Thomas Strache3, Thomas Gemming1, Ingolf Mönch1, Nayel Farag4, Rudolf Schäfer1, Jürgen Fassbender3, Eckhard Quandt2, and Ludwig Schultz1

1Leibniz Institute for Solid State and Materials Research IFW Dresden, Postfach 270116, 01171 Dresden, Germany
2Chair for Inorganic Functional Materials, CAU Kiel, Kaiserstrasse 2, 24143 Kiel, Germany
3Forschungszentrum Dresden Rossendorf e. V., P.O. Box 510119, 01314 Dresden, Germany
4Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany

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(Received 18 December 2008; accepted 20 January 2009; published online 9 February 2009)

The magnetic anisotropy of amorphous thin films was modified laterally by masked ion irradiation without alteration of the intrinsic magnetic properties. The changes were introduced by local ion implantation in a protection layer, causing additional stress-induced magnetic anisotropy in the magnetostrictive layer. The underlying local variation in magnetic anisotropy was modeled and confirmed experimentally. The described method, relying purely on magnetoelastics, introduces a new path to the alteration of magnetic properties subsequent to magnetic film preparation. With the use of the resulting artificial magnetization patterns, it is possible to tailor the ferromagnetic thin film structure used in magnetoelectronic applications.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous magnetic materials, ion implantation, magnetic anisotropy, magnetic thin films, magnetostriction, soft magnetic materials

PACS

  • 75.30.Gw

    Magnetic anisotropy

  • 75.70.Ak

    Magnetic properties of monolayers and thin films

  • 75.50.Kj

    Amorphous and quasicrystalline magnetic materials

  • 75.80.+q

    Magnetomechanical effects, magnetostriction

  • 61.80.Jh

    Ion radiation effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3079664

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    B. S. Berry and W. C. Pritchet, J. Appl. Phys. 67, 3661 (1990)JAPIAU000067000008003661000001.

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    J. McCord, J. Appl. Phys. 95, 6855 (2004)JAPIAU000095000011006855000001.

    H. Ni, X. Li, and H. Gao, Appl. Phys. Lett. 88, 043108 (2006)APPLAB000088000004043108000001.

    T. Rouxel, H. Ji, T. Hammouda, and A. Moréac, Phys. Rev. Lett. 100, 225501 (2008).


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