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Applied Physics Letters / Volume 95 / Issue 14 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 141901 (2009); http://dx.doi.org/10.1063/1.3242010 (3 pages)

Phase separation in GaN/AlGaN quantum dots

M. Benaissa1, L. Gu2, M. Korytov3, T. Huault3,4, P. A. van Aken2, J. Brault3, and P. Vennéguès3

1Centre National pour la Recherche Scientifique et Technique CNRST, angle Allal-Fassi/FAR, Madinat al-irfane, 10000 Rabat, Morocco
2Max Planck Institute for Metals Research, Heisenbergstr-3, 70569 Stuttgart, Germany
3Centre National de la Recherche Scientifique, CNRS-CRHEA, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
4RIBER S.A., 31 rue Casimir Périer, BP 70083, 95873 Bezons Cedex, France

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(Received 1 July 2009; accepted 11 September 2009; published online 5 October 2009)

Local investigations using high-angle annular-dark-field imaging combined with electron low-energy-loss spectroscopy were performed to closely characterize the GaN/Al0.5Ga0.5N quantum dots heterostructure. It is found that the Al0.5Ga0.5N barrier tends to exhibit phase separation. Gallium-rich arms arise from the top rims of the truncated quantum dots while the space between these arms is filled with aluminum-rich AlGaN. This phase separation, due to morphological and strain nonuniformities of the GaN front surface, provokes an optical-property modulation in the neighborhood of the quantum dots which, from a practical point of view, could affect the electronic barrier homogeneity.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electron energy loss spectra, gallium compounds, III-V semiconductors, phase separation, semiconductor quantum dots, surface morphology, wide band gap semiconductors

PACS

  • 64.75.Jk

    Phase separation and segregation in nanoscale systems

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 68.35.Gy

    Mechanical properties; surface strains

  • 64.75.Qr

    Phase separation and segregation in semiconductors

  • 78.67.Hc

    Quantum dots

  • 79.20.Uv

    Electron energy loss spectroscopy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3242010

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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