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Applied Physics Letters / Volume 95 / Issue 24 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 241907 (2009); http://dx.doi.org/10.1063/1.3273858 (3 pages)

MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001)

T. C. Lovejoy1, E. N. Yitamben1, S. M. Heald2, F. S. Ohuchi3, and M. A. Olmstead1

1Department of Physics, University of Washington (UW), Box 351560, Seattle, Washington 98195, USA and Center for Nanotechnology (CNT), UW, Seattle, Washington 98195, USA
2Advanced Photon Source, Argonne National Lab, Argonne, Illinois 60439, USA
3Department of Materials Science and Engineering, UW, Box 352120, Seattle, Washington 98195, USA and CNT, UW, Seattle, Washington 98195, USA

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(Received 19 September 2009; accepted 21 November 2009; published online 17 December 2009)

Heteroepitaxial thin films of Mn-doped Ga2Se3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1–2 nm, after which oriented islands with flat tops are observed by scanning tunneling microscopy. In contrast with the bulk phase diagram, which predicts MnGa2Se4 precipitates, the precipitates are identified by bond length measurements from extended x-ray absorption fine structure as rocksalt MnSe. This difference is attributed to superior lattice matching of MnSe to the substrate, and an epitaxial relationship between the MnSe and Si substrate is inferred.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

bond lengths, EXAFS, gallium compounds, manganese, manganese compounds, molecular beam epitaxial growth, phase separation, precipitation, scanning tunnelling microscopy, semiconductor epitaxial layers, semiconductor growth, semimagnetic semiconductors

PACS

  • 64.75.Qr

    Phase separation and segregation in semiconductors

  • 64.75.St

    Phase separation and segregation in thin films

  • 68.55.ag

    Semiconductors

  • 78.70.Dm

    X-ray absorption spectra

  • 81.05.Hd

    Other semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3273858

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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