Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range

Bauer, A.; Langer, F.; Dallner, M.; Kamp, M.; Motyka, M.; Sęk, G.; Ryczko, K.; Misiewicz, J.; Höfling, S.; Forchel, A.

doi:doi:10.1063/1.3270002

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Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator

An enhancement of the direct bandgap photoluminescence from Ge layer on silicon with boron or phosphorous δ-doping SiGe layers at room temperature is reported. The n-type δ-doping SiGe layer is proposed to transfer extra electrons to L valley in Ge, which decreases the possibility of the excited electrons in the Γ valley to be scattered to the L valley, and improve the photoluminescence of the direct band transition in the Ge layer. Additionally, 2.5 fold enhancement of luminescence from the st...

Tuning micropillar cavity birefringence by laser induced surface defects

We demonstrate a technique to tune the optical properties of micropillar cavities by creating small defects on the sample surface near the cavity region with an intense focused laser beam. Such defects modify strain in the structure, changing the birefringence in a controllable way. We apply the technique to make the fundamental cavity mode polarization-degenerate and to fine tune the overall mode frequencies, as needed for applications in quantum information science.

GaSb-based type-II quantum well (QW) structures and interband cascade lasers (ICLs) are investigated with regards to the dependence of emission wavelength on active QW thicknesses. Experimentally derived photoluminescence data and electrically driven ICL device data accompanied by theoretical calculations yield an average tuning rate of 0.55 μm per monolayer InAs in the range between 2.97 and 4.16 μm. Together with a temperature dependent ICL tuning behavior of 1.88 nm/K, the presented results provide the means for reliable and accurate emission wavelength control of ICLs in the 3–4 μm wavelength span which is of major importance for gas sensing applications.

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, photoluminescence, quantum cascade lasers, semiconductor quantum wells

PACS

42.55.Px

Semiconductor lasers; laser diodes
42.60.By

Design of specific laser systems

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3270002

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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