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Appl. Phys. Lett. 95, 041104 (2009); doi:10.1063/1.3189814 (3 pages)

Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing

J. A. Gupta, P. J. Barrios, J. Lapointe, G. C. Aers, and C. Storey

Institute for Microstructural Sciences, National Research Council of Canada, Ottawa K1A 0R6, Canada

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(Received 15 June 2009; accepted 8 July 2009; published online 27 July 2009)

Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20 °C continuous-wave operation, devices with a 400 μm long cavity provided 9 mW total output power at the 2396 nm target wavelength. High-resolution direct absorption measurements of HF gas agreed with HiTran calculations, yielding an absorption linewidth of 0.030 nm.

© 2009 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

  • 42.79.Dj

    Gratings

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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