APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

Applied Physics Letters / Volume 95 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 95, 052106 (2009); http://dx.doi.org/10.1063/1.3194153 (3 pages)

Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers

M. Bär1,2, I. Repins3, M. A. Contreras3, L. Weinhardt4, R. Noufi3, and C. Heske1

1Department of Chemistry, University of Nevada, Las Vegas, 4505 Maryland Parkway, P.O. Box 454003, Las Vegas, Nevada 89154-4003, USA
2Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Glienicker Str. 100, 14109 Berlin, Germany
3National Renewable Energy Laboratory, Golden, 1617 Cole Blvd., Golden, Colorado 80401, USA
4Experimentelle Physik II, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

View MapView Map

(Received 29 May 2009; accepted 11 July 2009; published online 6 August 2009)

The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the “In-terminated” absorber.

© 2009 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

conduction bands, copper compounds, energy gap, Fermi level, indium compounds, photoelectron spectra, semiconductor thin films, solar cells, surface structure, ternary semiconductors, thin film devices

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3194153

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.

    References

    M. Morkel, L. Weinhardt, B. Lohmüller, C. Heske, E. Umbach, W. Riedl, S. Zweigart, and F. Karg, Appl. Phys. Lett. 79, 4482 (2001)APPLAB000079000027004482000001.

    M. Bär, S. Nishiwaki, L. Weinhardt, S. Pookpanratana, O. Fuchs, M. Blum, W. Yang, J. D. Denlinger, W. N. Shafarman, and C. Heske, Appl. Phys. Lett. 93, 244103 (2008)APPLAB000093000024244103000001.

    L. Weinhardt, C. Heske, E. Umbach, T. P. Niesen, S. Visbeck, and F. Karg, Appl. Phys. Lett. 84, 3175 (2004)APPLAB000084000016003175000001.

    M. Bär, W. Bohne, J. Röhrich, E. Strub, S. Lindner, M. C. Lux-Steiner, Ch. -H. Fischer, T. P. Niesen, and F. Karg, J. Appl. Phys. 96, 3857 (2004)JAPIAU000096000007003857000001.


For access to citing articles, you need to log in.


Figures (2)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers
Go to AIP Home   © AIP Publishing LLC
close