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Applied Physics Letters / Volume 96 / Issue 11 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 112104 (2010); http://dx.doi.org/10.1063/1.3358388 (3 pages)

AlGaAs/GaAs single electron transistor fabricated without modulation doping

A. M. See1, O. Klochan1, A. R. Hamilton1, A. P. Micolich1, M. Aagesen2, and P. E. Lindelof2

1School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
2Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark

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(Received 19 January 2010; accepted 16 February 2010; published online 19 March 2010)

We have fabricated a quantum dot single electron transistor, based on AlGaAs/GaAs heterojunction without modulation doping, which exhibits clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak line shape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

Coulomb blockade, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3358388

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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