Physics of base charge dynamics in the three port transistor laser

Then, H. W.; Feng, M.; Holonyak, N.

doi:doi:10.1063/1.3364143

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Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

SiGe is routinely used to induce strain in modern semiconductors in order to improve the mobility of the carriers in the channel. Due to the absence of a technique that can accurately measure the strain in these devices with nanometer-scale resolution it has been difficult to assess the effects of processing such as silicidation on the compressive strain in the conduction channel. Here we show that by using dark field electron holography, the strain evolution at various stages of the device pro...

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO₂ high-K dielectric

In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on HfO2 high-K dielectric is investigated and compared by physical and electrical analysis. After annealing of the TiN/HfO2 stack at 1000 °C for 30 s, it is observed that: (1) Nitrogen tends to out-diffuse from TiN for all the samples; (2) Oxygen from the interfacial layer (IL) between HfO2 and Si t...

The base charge dynamics of the quantum-well (QW) transistor laser (TL) is analyzed by constructing a model based on earlier incomplete charge control analysis. We extend Kirchhoff’s Law to include electrical and consistently “optical” elements. The model yields, via microwave measurements (and resolvable picosecond responses), physical quantities associated with TL base-charging, permitting the extraction of a base QW charge density, n_QW = 2×10¹⁶ cm⁻³, consistent with calculation by current continuity. The low density implies quasi-Fermi level discontinuity in the TL base, and indicates that the base QW charge level is not as important as the current driving the QW and supplying electron-hole recombination.

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KEYWORDS and PACS

Keywords

Fermi level, quantum well lasers

PACS

42.55.Px

Semiconductor lasers; laser diodes
42.60.By

Design of specific laser systems

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3364143

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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