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Applied Physics Letters / Volume 96 / Issue 13 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 133304 (2010); http://dx.doi.org/10.1063/1.3360230 (3 pages)

High performance airbrushed organic thin film transistors

Calvin K. Chan, Lee J. Richter, Brad Dinardo, Cherno Jaye, Brad R. Conrad, Hyun Wook Ro, David S. Germack, Daniel A. Fischer, Dean M. DeLongchamp, and David J. Gundlach

National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8120, USA

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(Received 24 November 2009; accepted 8 February 2010; published online 30 March 2010)

Spray-deposited poly-3-hexylthiophene (P3HT) transistors were characterized using electrical and structural methods. Thin-film transistors with octyltrichlorosilane treated gate dielectrics and spray-deposited P3HT active layers exhibited a saturation regime mobility as high as 0.1 cm2 V−1 s−1, which is comparable to the best mobilities observed in high molecular mass P3HT transistors prepared using other methods. Optical and atomic force microscopy showed the presence of individual droplets with an average diameter of 20 μm and appreciable large-scale film inhomogeneities. Despite these inhomogeneities, near-edge x-ray absorption fine structure spectroscopy of the device-relevant channel interface indicated excellent orientation of the P3HT.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, carrier mobility, optical microscopy, organic semiconductors, semiconductor thin films, thin film transistors, XANES

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3360230

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (3) Tables (1)

Figures (click on thumbnails to view enlargements)

FIG.1
Schematic drawing of the spray deposition setup showing the relevant processing parameters used for the fabrication of P3HT films. Also shown is the OTFT device structure used for electrical characterization.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Optical microscopy (150 μm×250 μm) and (b) AFM (30 μm×50 μm) images taken from the top surface of spray-deposited P3HT films. The AFM height contrast is 250 nm. Various features are indicated by the arrows. A single solidified P3HT droplet on flat OTS8/SiO2 is shown inset in (b), where (c) is a line scan across the droplet. (d) UV-vis absorption spectra for P3HT films spray and spin deposited onto OTS8/quartz substrates.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) (ID-VDS) curves as a function of gate bias (VGS = 0 to −60 V) for a typical spray-coated P3HT thin-film transistor. (b) Saturation regime transfer curves (ID-VGS for VDS = −60 V) for spray- and spin-deposited P3HT transistors. Both sets of measurements were obtained from transistors with L/W ratios of 1000/25 μm/ μm. (c) The average and standard deviation of saturation regime mobilities for spray- and spin-deposited films plotted as a function of channel length.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Tables

Table I. Summary of the performance metrics obtained from a large set of spray- and spin-deposited P3HT thin-film transistors. The dichroic ratios (R) determined using NEXAFS are also listed.

View Table


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