APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 14 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 141116 (2010); http://dx.doi.org/10.1063/1.3380825 (3 pages)

Quasicontinuous refractive index tailoring of SiNx and SiOxNy for broadband antireflective coatings

Weibin Qiu, Young Mo Kang, and Lynford L. Goddard

Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 208 North Wright Street Urbana, Illinois 61801, USA

View MapView Map

(Received 5 November 2009; accepted 16 March 2010; published online 9 April 2010)

A broadband antireflective coating for silicon was fabricated by tailoring the compositions of SiNx and SiOxNy during conventional plasma enhanced chemical vapor deposition. The coating’s refractive index was quasicontinuously graded, e.g., from 3.22 to 1.44 at 1550 nm. Over the 280–3300 nm wavelength range, the reflectance was below 8% peak and 4.3% average. The deposited stack was composed of dense dielectric materials. This enables patterning and processing into robust devices after coating deposition. Using single layer ellipsometry data, the transfer matrix method was applied to predict the multilayer coating’s reflectance spectra. The results showed good agreement with experimental data.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

antireflection coatings, dielectric thin films, optical multilayers, plasma CVD, plasma CVD coatings, reflectivity, refractive index, silicon compounds

PACS

  • 42.79.Wc

    Optical coatings

  • 77.55.-g

    Dielectric thin films

  • 78.67.Pt

    Multilayers; superlattices; photonic structures; metamaterials

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3380825

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. H. Chang, P. Yu, and C. S. Yang, Appl. Phys. Lett. 94, 051114 (2009)APPLAB000094000005051114000001.

    C. -H. Sun, P. Jiang, and B. Jiang, Appl. Phys. Lett. 92, 061112 (2008)APPLAB000092000006061112000001.

    M. El kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, and G. Patriarche, J. Appl. Phys. 92, 1858 (2002)JAPIAU000092000004001858000001.

    L. L. Ma, Y. C. Zhou, N. Jiang, X. Lu, J. Shao, W. Lu, J. Ge, X. M. Ding, and X. Y. Hou, Appl. Phys. Lett. 88, 171907 (2006)APPLAB000088000017171907000001.

    C. C. Striemer and P. M. Fauchet, Appl. Phys. Lett. 81, 2980 (2002)APPLAB000081000016002980000001.

    J. -Q. Xi, M. Ojha, J. L. Plawsky, W. N. Gill, J. K. Kim, and E. F. Schubert, Appl. Phys. Lett. 87, 031111 (2005)APPLAB000087000003031111000001.


For access to citing articles, you need to log in.


Figures (5)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Quasicontinuous refractive index tailoring of SiNx and SiOxNy for broadband antireflective coatings
  2. High performance airbrushed organic thin film transistors
  3. AlGaAs/GaAs single electron transistor fabricated without modulation doping
  4. Proof of concept of the quantum capacitance detector
  5. Erratum: “System investigation of a rolled-up metamaterial optical hyperlens structure” [ Appl. Phys. Lett. 95, 083104 (2009) ]
Go to AIP Home
Copyright © American Institute of Physics
close