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Applied Physics Letters / Volume 96 / Issue 17 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 173104 (2010); http://dx.doi.org/10.1063/1.3413959 (3 pages)

A high-performance top-gate graphene field-effect transistor based frequency doubler

Zhenxing Wang, Zhiyong Zhang, Huilong Xu, Li Ding, Sheng Wang, and Lian-Mao Peng

Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China

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(Received 8 December 2009; accepted 3 April 2010; published online 27 April 2010)

A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency doubler is increased about ten times compared to that of the back-gate G-FET based device. The frequency response of the frequency doubler is also pushed from 10 kHz for a back-gate device to 200 kHz, at which most of the output power is concentrated at the doubled fundamental frequency of 400 kHz.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

capacitance, field effect transistors, frequency multipliers, frequency response, graphene

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3413959

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    X. R. Wang, Y. J. Ouyang, X. L. Li, H. L. Wang, J. Guo, and H. J. Dai, Phys. Rev. Lett. 100, 206803 (2008).

    A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Phys. Rev. Lett. 97, 187401 (2006).


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