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Appl. Phys. Lett. 96, 183107 (2010); http://dx.doi.org/10.1063/1.3427362 (3 pages)

Quantifying the dielectric constant of thick insulators using electrostatic force microscopy

L. Fumagalli1,2, G. Gramse1,2, D. Esteban-Ferrer1, M. A. Edwards1, and G. Gomila1,2

1Nanobioelec Group, Institute for BioEngineering of Catalonia (IBEC), c/Baldiri i Reixac 15-21, 08028 Barcelona, Spain
2Departament d’Electrònica, Universitat de Barcelona, c/Martí i Franquès 1, 08028 Barcelona, Spain

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(Received 3 March 2010; accepted 16 April 2010; published online 6 May 2010)

Quantitative measurement of the low-frequency dielectric constants of thick insulators at the nanoscale is demonstrated utilizing ac electrostatic force microscopy combined with finite-element calculations based on a truncated cone with hemispherical apex probe geometry. The method is validated on muscovite mica, borosilicate glass, poly(ethylene naphthalate), and poly(methyl methacrylate). The dielectric constants obtained are essentially given by a nanometric volume located at the dielectric-air interface below the tip, independently of the substrate thickness, provided this is on the hundred micrometer-length scale, or larger.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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