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Applied Physics Letters / Volume 96 / Issue 19 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 193101 (2010); http://dx.doi.org/10.1063/1.3425776 (3 pages)

Strain engineering in Si via closely stacked, site-controlled SiGe islands

J. J. Zhang1, N. Hrauda1, H. Groiss1, A. Rastelli2, J. Stangl1, F. Schäffler1, O. G. Schmidt2, and G. Bauer1

1Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz, Austria
2Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

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(Received 19 January 2010; accepted 3 March 2010; published online 10 May 2010)

The authors report on the fabrication and detailed structural characterization of ordered arrays of vertically stacked SiGe/Si(001) island pairs. By a proper choice of growth parameters, islands which have both large sizes and high Ge fraction are obtained in the upper layer. Finite element method calculations of the strain distribution reveal that (i) the Si spacer between a pair of islands can act as a lateral quantum dot molecule made of four nearby dots for electrons and (ii) the tensile strain in a Si cap deposited on top of the stack is significantly enhanced with respect to a single layer.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, finite element analysis, Ge-Si alloys, internal stresses, island structure, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3425776

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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