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Applied Physics Letters / Volume 96 / Issue 20 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 202105 (2010); http://dx.doi.org/10.1063/1.3428770 (3 pages)

The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

Shengqiang Zhou1,2, Danilo Bürger1, Wolfgang Skorupa1, Peter Oesterlin3, Manfred Helm1, and Heidemarie Schmidt1

1Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
2State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
3INNOVAVENT GmbH, Bertha-von-Suttner-Str. 5, 37085 Göttingen, Germany

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(Received 16 March 2010; accepted 21 April 2010; published online 18 May 2010)

In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 1018 to 2.1×1020 cm−3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, elemental semiconductors, ferromagnetic materials, galvanomagnetic effects, germanium, hole density, ion implantation, magnetic semiconductors, manganese, semiconductor doping

PACS

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

  • 75.50.Pp

    Magnetic semiconductors

  • 61.72.uf

    Ge and Si

  • 81.05.Cy

    Elemental semiconductors

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 61.72.Cc

    Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3428770

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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