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Applied Physics Letters / Volume 96 / Issue 26 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 261110 (2010); http://dx.doi.org/10.1063/1.3458819 (3 pages)

Spatially resolved ultrafast transport current in GaAs photoswitches

L. Prechtel1, S. Manus2, D. Schuh3, W. Wegscheider4, and A. W. Holleitner1

1Walter-Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
2Fakultät für Physik, Center for NanoScience (CeNS), Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany
3Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
4Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

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(Received 5 May 2010; accepted 10 June 2010; published online 1 July 2010)

We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as reported earlier. We interpret a time-delayed second pulse as a transport current. In a time-of-flight analysis we determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of an electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, photoconducting switches, photoconductivity, photoemission, solid-state plasma, time of flight spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458819

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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