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Applied Physics Letters / Volume 96 / Issue 3 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 032104 (2010); http://dx.doi.org/10.1063/1.3285180 (3 pages)

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

Takeshi Ota1, Toshiaki Hayashi1, Koji Muraki1, and Toshimasa Fujisawa1,2

1NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi 243-0198, Japan
2Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro 152-8551, Japan

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(Received 13 October 2009; accepted 15 December 2009; published online 19 January 2010)

We propose and demonstrate wide-band capacitance measurements on a semiconductor double quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we successfully measure current proportional to the capacitance associated with the single-electron motion over a wide frequency range from Hz to a few tens of GHz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium arsenide, high-frequency effects, III-V semiconductors, quantum point contacts, semiconductor heterojunctions, semiconductor quantum dots, tunnelling

PACS

  • 73.21.La

    Quantum dots

  • 73.40.Gk

    Tunneling

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3285180

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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