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Applied Physics Letters / Volume 96 / Issue 4 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 043308 (2010); http://dx.doi.org/10.1063/1.3279155 (3 pages)

Light-emitting electrochemical cells using polymeric ionic liquid/polyfluorene blends as luminescent material

Rebeca Marcilla1, David Mecerreyes1, Gustaf Winroth2, Sergio Brovelli2, Maria del Mar Rodriguez Yebra2, and Franco Cacialli2

1Department of New Materials, CIDETEC, Centre for Electrochemical Technologies, Parque Tecnologico de San Sebastian, P° Miramon 196, Donostia-San Sebastian 20009, Spain
2Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, London WC1E 6BT, United Kingdom

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(Received 27 October 2009; accepted 7 December 2009; published online 28 January 2010)

We report the use of blends composed of poly(9,9′-dioctylfluorene-alt-benzothiadiazole), F8BT, and a polymeric ionic liquid (PIL), poly(vinyl-ethylimidazolium bistrifluoromethanesulfonimide), as the active layer in light-emitting electrochemical cells (LECs) with the simple indium-tin-oxide/active-layer/Al configuration. The PIL provides both the ionic charge and the transport channel necessary for the devices to operate as LECs resulting in reduction of charge injection barriers at the electrode/active-layer interfaces. We find that the performance of devices using PIL:F8BT blends improved with respect to pure F8BT with maximum luminance increasing from 10–20 cd/m2 for pure F8BT to 2000–4000 cd/m2 for blends. Turn-on voltages were also reduced from above 7 V down to around 3.6–4 V. The maximum external quantum efficiency was increased from 10−3%–10−4% to values higher than 0.1%.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, brightness, cells (electric), charge injection, electrochemical electrodes, indium compounds, light emitting devices, organic semiconductors, polymer blends, polymer solutions, semiconductor-insulator boundaries, semiconductor-metal boundaries

PACS

  • 85.60.Jb

    Light-emitting devices

  • 82.45.Fk

    Electrodes

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 73.40.Ns

    Metal-nonmetal contacts

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3279155

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. J. C. deMello, N. Tessler, S. C. Graham, and R. H. Friend, Phys. Rev. B 57, 12951 (1998).
  2. Q. B. Pei, G. Yu, C. Zhang, Y. Yang, and A. J. Heeger, Science 269, 1086 (1995). [Inspec] [ISI] [MEDLINE]
  3. J. C. deMello, Nature Mater. 6, 796 (2007). [MEDLINE]
  4. Q. B. Pei, Y. Yang, G. Yu, C. Zhang, and A. J. Heeger, J. Am. Chem. Soc. 118, 3922 (1996).
  5. Q. B. Pei and Y. Yang, J. Am. Chem. Soc. 118, 7416 (1996).
  6. J. Morgado, F. Cacialli, R. H. Friend, B. S. Chuah, H. Rost, and A. B. Holmes, Macromolecules 34, 3094 (2001).
  7. S. Brovelli, G. Latini, M. J. Frampton, S. O. McDonnell, F. E. Oddy, O. Fenwick, H. L. Anderson, and F. Cacialli, Nano Lett. 8, 4546 (2008). [MEDLINE]
  8. G. Latini, L. J. Parrott, S. Brovelli, M. J. Frampton, H. L. Anderson, and F. Cacialli, Adv. Funct. Mater. 18, 2419 (2008).
  9. J. S. Wilson, M. J. Frampton, J. J. Michels, L. Sardone, G. Marletta, R. H. Friend, P. Samori, H. L. Anderson, and F. Cacialli, Adv. Mater. 17, 2659 (2005).
  10. L. Edman, M. Pauchard, B. Liu, G. Bazan, D. Moses, and A. J. Heeger, Appl. Phys. Lett. 82, 3961 (2003)APPLAB000082000022003961000001. [ISI]
  11. S. H. Oh, S. I. Na, Y. C. Nah, D. Vak, S. S. Kim, and D. Y. Kim, Org. Electron. 8, 773 (2007). [Inspec]
  12. Z. Gu, Q. D. Shen, J. Zhang, C. Z. Yang, and Y. J. Bao, J. Appl. Polym. Sci. 100, 2930 (2006).
  13. S. Sax, G. Mauthner, T. Piok, S. Pradhan, U. Scherf, and E. J. W. List, Org. Electron. 8, 791 (2007). [Inspec]
  14. L. Edman, B. Liu, M. Vehse, J. Swensen, G. C. Bazan, and A. J. Heeger, J. Appl. Phys. 98, 044502 (2005)JAPIAU000098000004044502000001. [ISI]
  15. C. H. Yang, Q. J. Sun, J. Qiao, and Y. F. Li, J. Phys. Chem. B 107, 12981 (2003).
  16. S. Panozzo, M. Armand, and O. Stephan, Appl. Phys. Lett. 80, 679 (2002)APPLAB000080000004000679000001.
  17. Y. Shao, G. C. Bazan, and A. J. Heeger, Adv. Mater. 19, 365 (2007).
  18. J. H. Shin, S. Xiao, A. Fransson, and L. Edman, Appl. Phys. Lett. 87, 043506 (2005)APPLAB000087000004043506000001.
  19. R. Marcilla, F. Alcaide, H. Sardon, J. A. Pomposo, C. Pozo-Gonzalo, and D. Mecerreyes, Electrochem. Commun. 8, 482 (2006). [Inspec]
  20. M. Hamedi, L. Herlogsson, X. Crispin, R. Marcilla, M. Berggren, and O. Inganas, Adv. Mater. 21, 573 (2009).
  21. J. H. Wu, S. Hao, Z. Lan, J. M. Lin, M. L. Huang, Y. F. Huang, P. J. Li, S. Yin, and T. Satot, J. Am. Chem. Soc. 130, 11568 (2008). [MEDLINE]
  22. J. S. Kim, F. Cacialli, and R. H. Friend, Thin Solid Films 445, 358 (2003). [Inspec] [ISI]

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Figures (click on thumbnails to view enlargements)

FIG.1
Top: Chemical structure of the luminescent polymer poly(9,9′-dioctylfluorene-alt-benzothiadiazole), F8BT, and of the PIL poly(vinyl-ethylimidazolium bistrifluoromethanesulfonimide). Bottom panel: Normalized PL spectra for neat F8BT, and in 25% and 50% bw of PIL [PIL:(PIL+F8BT) ratio].

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
AFM topography images of a solid films (thickness ∼ 150 nm) of (a) pure F8BT (roughness root mean square, RRMS = 1.4 nm), and PIL:F8BT blends with (b) 25% bw (RRMS = 5.0 nm) and (c) 50% bw (RRMS = 15 nm) PIL fractions.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Top: Schematic structure of the light-emitting electro-chemical cell. Bottom panel: (a) Current density-voltage-luminance (JVL) characteristics of three ITO/active layer/Al devices biased in forward direction. Active layers are composed of pure F8BT, 25% bw and 50% bw of PIL [PIL:(PIL+F8BT) ratio]. Inset: EQE for 0% (solid line), 25% (dotted line), and 50% (dashed line) PIL blends (b) JVL response of an ITO/active layer/Al device biased in reverse direction. The composition of the active layer is 25% bw of PIL [PIL:(PIL+F8BT) ratio]. Inset: the corresponding EQE.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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