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Appl. Phys. Lett. 96, 082108 (2010); http://dx.doi.org/10.1063/1.3330861 (3 pages)

Magnetic-field-controlled noise-activated switching in a nonlinear three-terminal nanojunction

F. Hartmann1, D. Hartmann1, P. Kowalzik1, L. Gammaitoni2, A. Forchel1, and L. Worschech1

1Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
2NiPS Laboratory, Dipartimento di Fisica, Universita di Perugia, I-06123 Perugia, Italy and Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, I-06123 Perugia, Italy

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(Received 19 January 2010; accepted 30 January 2010; published online 23 February 2010)

Magnetic-field-controlled switching of a nonlinear three-terminal nanojunction was studied. Noise-activated switching was observed, which depends sensitively on the strength of an external magnetic field. Such a functioning resembles a noise-activated nonlinear detector as proposed by Gammaitoni and Bulsara [Phys. Rev. Lett. 88, 230601 (2002)] for magnetic fields realized with a nanoelectronic device.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.07.-b

    Nanoscale materials and structures: fabrication and characterization

  • 81.16.Nd

    Micro- and nanolithography

  • 85.40.Hp

    Lithography, masks and pattern transfer

  • 81.65.Cf

    Surface cleaning, etching, patterning

  • 85.35.-p

    Nanoelectronic devices

  • 81.05.Ea

    III-V semiconductors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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