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Applied Physics Letters / Volume 97 / Issue 4 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 043113 (2010); http://dx.doi.org/10.1063/1.3474613 (3 pages)

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

S. Heydrich, M. Hirmer, C. Preis, T. Korn, J. Eroms, D. Weiss, and C. Schüller

Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany

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(Received 10 June 2010; accepted 12 July 2010; published online 30 July 2010)

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths, and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band phonon mode, accompanied by a line narrowing, while the 2D two-phonon mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

doping, electron beam lithography, graphene, phonons, Raman spectra, sputter etching

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3474613

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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