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Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors
W. Pan, J. F. Klem, J. K. Kim, M. Thalakulam, M. J. Cich, and S. K. Lyo
The authors have fabricated a field-effect transistor of inverted type-II InAs/GaSb heterostructure, a two-dimensional topological insulator. Electronic transport measurements were carried out at temperatures down to 25 mK and in magnetic fields up to 30 Tesla. Three main experimental results were obtained: (1) well-developed integer quantum Hall effect states at Landau level fillings v=1, 2 in the hole regime and v=1, 2, 3… in the electron regime, (2) a chaotic quantum transport behavior at extremely high magnetic fields around the charge neutrality point (CNP), and (3) a circular conductivity law around the CNP. Furthermore, they are able to deduce the values of electron and hole densities at the charge
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