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Detecting p-type conduction in Ba-doped InN
Q. Y. Xie, W. M. Xie, J. L. Wang, H. P. Zhu, J. H. Yang, L. Sun, and X. S. Wu
The buried p-type conduction is demonstrated in InN with Ba ion implantation dose increases up to 1 × 1015 ions/cm−2. The in-plane lattice parameter increases by about 1.2% deep in the film due to larger Ba replacing smaller indium (In).
Appl. Phys. Lett. 102, 042109 (2013) | HTML | PDF
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