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Top 20 Most Cited Articles
The 20 most cited articles over time based on CrossRef data.
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Organic electroluminescent diodes Appl. Phys. Lett. 51, 913 (1987); http://dx.doi.org/10.1063/1.98799 (3 pages) | Cited 4680 times
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A novel electroluminescent device is constructed using organic materials as the emitting elements. The diode has a double‐layer structure of organic thin films, prepared by vapor deposition. Efficient injection of holes and electrons is provided from an indium‐tin‐oxide anode and an alloyed Mg:Ag cathode. Electron‐hole recombination and green electroluminescent emission are confined near the organic interface region. High external quantum efficiency (1% photon/electron), luminous efficiency (1.5 lm/W), and brightness (>1000 cd/m2) are achievable at a driving voltage below 10 V. |
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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Appl. Phys. Lett. 57, 1046 (1990); http://dx.doi.org/10.1063/1.103561 (3 pages) | Cited 3775 times
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Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si. |
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VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH Appl. Phys. Lett. 4, 89 (1964); http://dx.doi.org/10.1063/1.1753975 (2 pages) | Cited 2099 times Online Publication Date: 23 December 2004
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Electronic analog of the electro‐optic modulator Appl. Phys. Lett. 56, 665 (1990); http://dx.doi.org/10.1063/1.102730 (3 pages) | Cited 1678 times
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We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias. |
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Multidimensional quantum well laser and temperature dependence of its threshold current Appl. Phys. Lett. 40, 939 (1982); http://dx.doi.org/10.1063/1.92959 (3 pages) | Cited 1319 times
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A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C. |
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Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes Appl. Phys. Lett. 64, 1687 (1994); http://dx.doi.org/10.1063/1.111832 (3 pages) | Cited 1271 times
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Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs. |
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A highly processable metallic glass: Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 Appl. Phys. Lett. 63, 2342 (1993); http://dx.doi.org/10.1063/1.110520 (3 pages) | Cited 1255 times
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We report on the properties of one example of a new family of metallic alloys which exhibit excellent glass forming ability. The critical cooling rate to retain the glassy phase is of the order of 10 K/s or less. Large samples in the form of rods ranging up to 14 mm in diameter have been prepared by casting in silica containers. The undercooled liquid alloy has been studied over a wide range of temperatures between the glass transition temperature and the thermodynamic melting point of the equilibrium crystalline alloy using scanning calorimetry. Crystallization of the material has been studied. Some characteristic properties of the new material are presented. The origins of exceptional glass forming ability of these new alloys are discussed. |
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Visible light emission from semiconducting polymer diodes Appl. Phys. Lett. 58, 1982 (1991); http://dx.doi.org/10.1063/1.105039 (3 pages) | Cited 1214 times
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We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light‐emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission. |
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Submicrosecond bistable electro‐optic switching in liquid crystals Appl. Phys. Lett. 36, 899 (1980); http://dx.doi.org/10.1063/1.91359 (3 pages) | Cited 1155 times Online Publication Date: 23 July 2008
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Ferroelectric smectic C (FSC) liquid crystals are used in a simple new geometry that allows the spontaneous formation of either of two surface‐stabilized smectic C monodomains of opposite ferroelectric polarization. These domains are separated by well‐defined walls which may be manipulated with an applied electric field. The resulting electro‐optic effects exhibit a unique combination of properties: microsecond dynamics, threshold behavior, symmetric bistability, and a large electro‐optic response. |
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Reversible conductivity changes in discharge‐produced amorphous Si Appl. Phys. Lett. 31, 292 (1977); http://dx.doi.org/10.1063/1.89674 (3 pages) | Cited 1058 times Online Publication Date: 26 August 2008
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A new reversible photoelectronic effect is reported for amorphous Si produced by glow discharge of SiH4. Long exposure to light decreases both the photoconductivity and the dark conductivity, the latter by nearly four orders of magnitude. Annealing above 150 °C reverses the process. A model involving optically induced changes in gap states is proposed. The results have strong implications for both the physical nature of the material and for its applications in thin‐film solar cells, as well as the reproducibility of measurements on discharge‐produced Si. |
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Electronic structure of chiral graphene tubules Appl. Phys. Lett. 60, 2204 (1992); http://dx.doi.org/10.1063/1.107080 (3 pages) | Cited 1039 times
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The electronic structure for graphene monolayer tubules is predicted as a function of the diameter and helicity of the constituent graphene tubules. The calculated results show that approximately 1/3 of these tubules are a one‐dimensional metal which is stable against a Peierls distortion, and the other 2/3 are one‐dimensional semiconductors. The implications of these results are discussed. |
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2.5% efficient organic plastic solar cells Appl. Phys. Lett. 78, 841 (2001); http://dx.doi.org/10.1063/1.1345834 (3 pages) | Cited 998 times
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We show that the power conversion efficiency of organic photovoltaic devices based on a conjugated polymer/methanofullerene blend is dramatically affected by molecular morphology. By structuring the blend to be a more intimate mixture that contains less phase segregation of methanofullerenes, and simultaneously increasing the degree of interactions between conjugated polymer chains, we have fabricated a device with a power conversion efficiency of 2.5% under AM1.5 illumination. This is a nearly threefold enhancement over previously reported values for such a device, and it approaches what is needed for the practical use of these devices for harvesting energy from sunlight. © 2001 American Institute of Physics. |
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Single- and multi-wall carbon nanotube field-effect transistors Appl. Phys. Lett. 73, 2447 (1998); http://dx.doi.org/10.1063/1.122477 (3 pages) | Cited 991 times
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We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors. © 1998 American Institute of Physics. |
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Very high-efficiency green organic light-emitting devices based on electrophosphorescence Appl. Phys. Lett. 75, 4 (1999); http://dx.doi.org/10.1063/1.124258 (3 pages) | Cited 986 times
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We describe the performance of an organic light-emitting device employing the green electrophosphorescent material, fac tris(2-phenylpyridine) iridium [Ir(ppy)3] doped into a 4,4′-N,N′-dicarbazole-biphenyl host. These devices exhibit peak external quantum and power efficiencies of 8.0% (28 cd/A) and 31 lm/W, respectively. At 100 cd/m2, the external quantum and power efficiencies are 7.5% (26 cd/A) and 19 lm/W at an operating voltage of 4.3 V. This performance can be explained by efficient transfer of both singlet and triplet excited states in the host to Ir(ppy)3, leading to a high internal efficiency. In addition, the short phosphorescent decay time of Ir(ppy)3 (<1 μs) reduces saturation of the phosphor at high drive currents, yielding a peak luminance of 100 000 cd/m2. © 1999 American Institute of Physics. |
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Tunneling in a finite superlattice Appl. Phys. Lett. 22, 562 (1973); http://dx.doi.org/10.1063/1.1654509 (3 pages) | Cited 982 times Online Publication Date: 16 October 2003
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We have computed the transport properties of a finite superlattice from the tunneling point of view. The computed I‐V characteristic describes the experimental cases of a limited number of spatial periods or a relatively short electron mean free path. |
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Two‐layer organic photovoltaic cell Appl. Phys. Lett. 48, 183 (1986); http://dx.doi.org/10.1063/1.96937 (3 pages) | Cited 975 times
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A thin‐film, two‐layer organic photovoltaic cell has been fabricated from copper phthalocyanine and a perylene tetracarboxylic derivative. A power conversion efficiency of about 1% has been achieved under simulated AM2 illumination. A novel feature of the device is that the charge‐generation efficiency is relatively independent of the bias voltage, resulting in cells with fill factor values as high as 0.65. The interface between the two organic materials, rather than the electrode/organic contacts, is crucial in determining the photovoltaic properties of the cell. |
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs Appl. Phys. Lett. 69, 363 (1996); http://dx.doi.org/10.1063/1.118061 (3 pages) | Cited 973 times
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A new GaAs‐based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x‐ray diffraction and shown to increase with the increase of Mn composition, x. Well‐aligned in‐plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer. © 1996 American Institute of Physics. |
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Optically pumped lasing of ZnO at room temperature Appl. Phys. Lett. 70, 2230 (1997); http://dx.doi.org/10.1063/1.118824 (3 pages) | Cited 921 times
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We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices. © 1997 American Institute of Physics. |
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Imprint of sub‐25 nm vias and trenches in polymers Appl. Phys. Lett. 67, 3114 (1995); http://dx.doi.org/10.1063/1.114851 (3 pages) | Cited 890 times
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A nanoimprint process that presses a mold into a thin thermoplastic polymer film on a substrate to create vias and trenches with a minimum size of 25 nm and a depth of 100 nm in the polymer has been demonstrated. Furthermore, the imprint process has been used as a lithography process to fabricate sub‐25 nm diameter metal dot arrays of a 100 nm period in a lift‐off process. It was found that the nanostructures imprinted in the polymers conform completely with the geometry of the mold. At present, the imprinted size is limited by the size of the mold being used; with a suitable mold, the imprint process should mold sub‐10 nm structures with a high aspect ratio in polymers. The nanoimprint process offers a low cost method for mass producing sub‐25 nm structures and has the potential to become a key nanolithography method for future manufacturing of integrated circuits and integrated optics. © 1995 American Institute of Physics. |
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