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Top 20 Most Read Articles

May 2010

The 20 articles with the most full-text downloads during the month, in descending order.


Comment on “Guided modes in graphene waveguides” [ Appl. Phys. Lett. 94, 212105 (2009) ]

Cesar E. P. Villegas and Marcos R. S. Tavares

Appl. Phys. Lett. 96, 186101 (2010); http://dx.doi.org/10.1063/1.3425716 (2 pages)

Online Publication Date: 5 May 2010

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Abstract Unavailable
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84.40.Az Waveguides, transmission lines, striplines

Response to “Comment on ‘Guided modes in graphene waveguides’” [ Appl. Phys. Lett. 96, 186101 (2010) ]

Ying He, Fan-Ming Zhang, and Xi Chen

Appl. Phys. Lett. 96, 186102 (2010); http://dx.doi.org/10.1063/1.3425717 (2 pages)

Online Publication Date: 5 May 2010

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Abstract Unavailable
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42.79.Gn Optical waveguides and couplers
73.20.At Surface states, band structure, electron density of states

Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene

Bernard Aufray, Abdelkader Kara, Sébastien Vizzini, Hamid Oughaddou, Christel Léandri, Benedicte Ealet, and Guy Le Lay

Appl. Phys. Lett. 96, 183102 (2010); http://dx.doi.org/10.1063/1.3419932 (3 pages)

Online Publication Date: 3 May 2010

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Scanning tunneling microscopy (STM) and ab initio calculations based on density functional theory (DFT) were used to study the self-aligned silicon nanoribbons on Ag(110) with honeycomb, graphene-like structure. The silicon honeycombs structure on top of the silver substrate is clearly observed by STM, while the DFT calculations confirm that the Si atoms adopt spontaneously this new silicon structure.
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81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Rare frustration of optical supercontinuum generation

D. R. Solli, C. Ropers, and B. Jalali

Appl. Phys. Lett. 96, 151108 (2010); http://dx.doi.org/10.1063/1.3374860 (3 pages)

Online Publication Date: 14 April 2010

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Recent work has shown that optical rogue waves, large bandwidth fluctuations following heavy-tailed statistics, can arise during spectral broadening by stochastic enhancement of nonlinearity. Here, we report the observation of a different form of extreme fluctuations in supercontinuum pulse trains: Pulses of unusually small spectral bandwidth following left-skewed heavy-tailed statistics. Displaying a pulse evolution strongly varying from that of large extremes in supercontinuum, these rogue events appear when spectral broadening is frustrated by competition between presolitonic features within the modulation-instability band. This suppression effect can also be externally induced with a weak control pulse.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
02.50.Ey Stochastic processes

In search of the elusive lossless metal

J. B. Khurgin and G. Sun

Appl. Phys. Lett. 96, 181102 (2010); http://dx.doi.org/10.1063/1.3425890 (3 pages)

Online Publication Date: 3 May 2010

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We show that when one looks beyond the Drude model of metal conductivity, the metals that may be extremely lossy for low frequency electromagnetic waves can become perfectly lossless in the mid-IR region or higher, while retaining the essential metallic characteristic of negative permittivity even at those frequencies. We identify that the transition to the lossless regime occurs when the interatomic distances in the lattice exceed certain values, typically a factor of two larger than those occurring in nature. We believe that advances in nanoassembly may render lossless metals feasible with revolutionary implications for the fields of plasmonics and metamaterials.
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42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Optical transmission of periodic annular apertures in metal film on high-refractive index substrate: The role of the nanopillar shape

J.-S. Bouillard, J. Einsle, W. Dickson, S. G. Rodrigo, S. Carretero-Palacios, L. Martin-Moreno, F. J. Garcia-Vidal, and A. V. Zayats

Appl. Phys. Lett. 96, 201101 (2010); http://dx.doi.org/10.1063/1.3427390 (3 pages)

Online Publication Date: 17 May 2010

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The influence of annular aperture parameters on the optical transmission through arrays of coaxial apertures in a metal film on high refractive index substrates has been investigated experimentally and numerically. It is shown that the transmission resonances are related to plasmonic crystal effects rather than frequency cutoff behavior associated with annular apertures. The role of deviations from ideal aperture shape occurring during the fabrication process has also been studied. Annular aperture arrays are often considered in many applications for achieving high optical transmission through metal films and understanding of nanofabrication tolerances are important.
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78.66.Bz Metals and metallic alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.07.Bc Nanocrystalline materials
75.75.-c Magnetic properties of nanostructures

Metal grid/conducting polymer hybrid transparent electrode for inverted polymer solar cells

Jingyu Zou, Hin-Lap Yip, Steven K. Hau, and Alex K.-Y. Jen

Appl. Phys. Lett. 96, 203301 (2010); http://dx.doi.org/10.1063/1.3394679 (3 pages)

Online Publication Date: 17 May 2010

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A simple method was developed using metal grid/conducting polymer hybrid transparent electrode to replace indium tin oxide (ITO) for the fabrication of inverted structure polymer solar cells. The performance of the devices could be tuned easily by varying the width and separation of the metal grids. By combining the appropriate metal grid geometry with a thin conductive polymer layer, substrates with comparable transparency and sheet resistance to those of ITO could be achieved. Polymer solar cells fabricated using this hybrid electrode show efficiencies as high as ∼ 3.2%. This method provides a feasible way for fabricating low-cost, large-area organic solar cells.
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88.40.H- Solar cells (photovoltaics)

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow

Appl. Phys. Lett. 96, 201102 (2010); http://dx.doi.org/10.1063/1.3430039 (3 pages)

Online Publication Date: 17 May 2010

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n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.
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85.60.Jb Light-emitting devices
78.66.Hf II-VI semiconductors
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

A cold atom pyramidal gravimeter with a single laser beam

Q. Bodart, S. Merlet, N. Malossi, F. Pereira Dos Santos, P. Bouyer, and A. Landragin

Appl. Phys. Lett. 96, 134101 (2010); http://dx.doi.org/10.1063/1.3373917 (3 pages)

Online Publication Date: 29 March 2010

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We demonstrate a scheme for realizing a compact cold atom gravimeter. The use of a hollow pyramidal configuration allows to achieve all functions: trapping, interferometer and detection with a unique laser beam leading to a drastic reduction in complexity and volume. In particular, we demonstrate a relative sensitivity to acceleration of gravity (g) of 1.7×10−7 at one second, with a moderate laser power of 50 mW. This simple geometry combined to such a high sensitivity opens wide perspectives for practical applications.
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93.85.Hj Gravity methods
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

Charge generation layers comprising transition metal-oxide/organic interfaces: Electronic structure and charge generation mechanism

J. Meyer, M. Kröger, S. Hamwi, F. Gnam, T. Riedl, W. Kowalsky, and A. Kahn

Appl. Phys. Lett. 96, 193302 (2010); http://dx.doi.org/10.1063/1.3427430 (3 pages)

Online Publication Date: 10 May 2010

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The energetics of an archetype charge generation layer (CGL) architecture comprising of 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), tungsten oxide (WO3), and bathophenanthroline (BPhen) n-doped with cesium carbonate (Cs2CO3) are determined by ultraviolet and inverse photoemission spectroscopy. We show that the charge generation process occurs at the interface between the hole-transport material (TCTA) and WO3 and not, as commonly assumed, at the interface between WO3 and the n-doped electron-transport material (BPhen:Cs2CO3). However, the n-doped layer is also essential to the realization of an efficient CGL structure. The charge generation mechanism occurs via electron transfer from the TCTA highest occupied molecular orbital level to the transition metal-oxide conduction band.
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73.20.At Surface states, band structure, electron density of states
72.20.Fr Low-field transport and mobility; piezoresistance
79.60.Jv Interfaces; heterostructures; nanostructures
78.40.-q Absorption and reflection spectra: visible and ultraviolet
61.72.up Other materials

Organic Schottky barrier photovoltaic cells based on MoOx/C60

Minlu Zhang, Irfan, Huanjun Ding, Yongli Gao, and C. W. Tang

Appl. Phys. Lett. 96, 183301 (2010); http://dx.doi.org/10.1063/1.3415497 (3 pages)

Online Publication Date: 4 May 2010

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We report that the performance of indium tin oxide/molybdenum oxide/fullerene (ITO/MoOx/C60) photovoltaic cells is highly sensitive to the method of depositing MoOx film. The highest open-circuit voltage and short-circuit current are obtained using thermally evaporated MoOx. In contrast, sputtered MoOx produces lower efficiencies. X-ray and ultraviolet photoemission analyses indicate that pristine thermally evaporated MoOx has a high work function of 6.8 eV and Mo6+ oxidation state, whereas argon-sputtered MoOx is characterized by lower work function and coexistence of both Mo6+ and Mo5+ states. The photovoltaic performance of the ITO/MoOx/C60 cells is consistent with MoOx functioning as the Schottky barrier contact.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.-i Photoemission and photoelectron spectra
68.55.ap Fullerenes
68.55.at Other materials
85.60.-q Optoelectronic devices

Drawn metamaterials with plasmonic response at terahertz frequencies

A. Tuniz, B. T. Kuhlmey, R. Lwin, A. Wang, J. Anthony, R. Leonhardt, and S. C. Fleming

Appl. Phys. Lett. 96, 191101 (2010); http://dx.doi.org/10.1063/1.3428576 (3 pages)

Online Publication Date: 10 May 2010

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Electromagnetic metamaterials attract much attention since they can be engineered to exhibit optical properties not found in nature. Their fabrication, however, is challenging, especially in volume. We introduce drawing as a means of fabricating metamaterials, thus demonstrating a terahertz metamaterial. We codraw polymethyl-methacrylate and indium, producing several meters of metamaterial with wire diameters down to ∼ 10 μm, and lattice constants of ∼ 100 μm. We experimentally characterize the transmission properties of different samples, observing high-pass filtering between 0.3–0.4 THz, in good agreement with simulations.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
78.70.Gq Microwave and radio-frequency interactions
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
81.20.-n Methods of materials synthesis and materials processing

Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

Bryan Ellis, Tomas Sarmiento, Marie Mayer, Bingyang Zhang, James Harris, Eugene Haller, and Jelena Vuckovic

Appl. Phys. Lett. 96, 181103 (2010); http://dx.doi.org/10.1063/1.3425663 (3 pages)

Online Publication Date: 4 May 2010

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A technique to electrically pump photonic crystal nanocavities using a lateral p-i-n junction is described. Ion implantation doping is used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated and the electrical characteristics of the diode are presented. The fabrication improvements necessary for making an electrically pumped nanocavity laser using a lateral junction are discussed.
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42.55.Tv Photonic crystal lasers and coherent effects
42.55.Px Semiconductor lasers; laser diodes
42.72.-g Optical sources and standards
42.82.-m Integrated optics
42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials

Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

M. Caironi, C. Newman, J. R. Moore, D. Natali, H. Yan, A. Facchetti, and H. Sirringhaus

Appl. Phys. Lett. 96, 183303 (2010); http://dx.doi.org/10.1063/1.3424792 (3 pages)

Online Publication Date: 5 May 2010

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We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2/V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.
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85.30.Tv Field effect devices

Photonic crystal nanobeam cavity strongly coupled to the feeding waveguide

Qimin Quan, Parag B. Deotare, and Marko Loncar

Appl. Phys. Lett. 96, 203102 (2010); http://dx.doi.org/10.1063/1.3429125 (3 pages)

Online Publication Date: 17 May 2010

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A deterministic design of an ultrahigh Q-factor, wavelength-scale photonic crystal nanobeam cavity is proposed and experimentally demonstrated. Using this approach, cavities with Q>106 and on-resonance transmission T>90% are designed. The devices, fabricated in silicon and capped with a low refractive index polymer, have experimental Q = 80 000 and T = 73%. This is, to the best of our knowledge, the highest transmission measured in deterministically designed, wavelength-scale high-Q cavities.
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42.82.Gw Other integrated-optical elements and systems
42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
42.70.Qs Photonic bandgap materials

Strain engineering in Si via closely stacked, site-controlled SiGe islands

J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt, and G. Bauer

Appl. Phys. Lett. 96, 193101 (2010); http://dx.doi.org/10.1063/1.3425776 (3 pages)

Online Publication Date: 10 May 2010

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The authors report on the fabrication and detailed structural characterization of ordered arrays of vertically stacked SiGe/Si(001) island pairs. By a proper choice of growth parameters, islands which have both large sizes and high Ge fraction are obtained in the upper layer. Finite element method calculations of the strain distribution reveal that (i) the Si spacer between a pair of islands can act as a lateral quantum dot molecule made of four nearby dots for electrons and (ii) the tensile strain in a Si cap deposited on top of the stack is significantly enhanced with respect to a single layer.
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68.55.ag Semiconductors
68.60.Bs Mechanical and acoustical properties

Response to “Comment on ‘Enhanced spin injection and voltage bias in (Zn,Co)O/MgO/(Zn,Co)O magnetic tunnel junctions’ ” [ Appl. Phys. Lett. 96, 116101 (2010) ]

G. Chen, F. Zeng, and F. Pan

Appl. Phys. Lett. 96, 116102 (2010); http://dx.doi.org/10.1063/1.3360210 (2 pages)

Online Publication Date: 19 March 2010

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Abstract Unavailable
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
72.25.-b Spin polarized transport
72.20.My Galvanomagnetic and other magnetotransport effects
75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.76.+j Spin transport effects

Comment on “Carbon nanowalls as material for electrochemical transducers” [ Appl. Phys. Lett. 95, 014104 (2009) ]

Ali Eftekhari

Appl. Phys. Lett. 96, 126102 (2010); http://dx.doi.org/10.1063/1.3357437 (2 pages)

Online Publication Date: 23 March 2010

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Abstract Unavailable
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82.45.Yz Nanostructured materials in electrochemistry
61.46.-w Structure of nanoscale materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.43.Dq Amorphous semiconductors, metals, and alloys
82.45.Fk Electrodes

Response to “Comment on ‘Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature’ ” [ Appl. Phys. Lett. 96, 136101 (2010) ]

Hong Ma, Zuanming Jin, and Guohong Ma

Appl. Phys. Lett. 96, 136102 (2010); http://dx.doi.org/10.1063/1.3371819 (1 page)

Online Publication Date: 30 March 2010

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Abstract Unavailable
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72.80.Ey III-V and II-VI semiconductors
72.20.-i Conductivity phenomena in semiconductors and insulators
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.30.Ds Spin waves

Comment on “Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature” [ Appl. Phys. Lett. 94, 241112 (2009) ]

J. H. Jiang and M. W. Wu

Appl. Phys. Lett. 96, 136101 (2010); http://dx.doi.org/10.1063/1.3371817 (2 pages)

Online Publication Date: 30 March 2010

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Abstract Unavailable
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75.30.Ds Spin waves
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.05.Dz II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors
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