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Top 20 Most Read Articles

August 2011

The 20 articles with the most full-text downloads during the month, in descending order.


Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Yan Cheng, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, Songlin Feng, and Bomy Chen

Appl. Phys. Lett. 99, 032105 (2011); http://dx.doi.org/10.1063/1.3614553 (3 pages)

Online Publication Date: 22 July 2011

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The phase change memory with monolayer chalcogenide film (Si18Sb52Te30) is investigated for the feasibility of multilevel data storage. During the annealing of the film, a relatively stable intermediate resistance can be obtained at an appropriate heating rate. The transmission electron microscopy in situ analysis reveals a conversion of crystallization mechanism from nucleation to crystal growth, which leads a continuous reduction in the degree of disorder. It is indicated from the electrical properties of the devices that the fall edge of the voltage pulse is the critical factor that determines a reliable triple-level resistance state of the phase change memory cell.
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84.30.Sk Pulse and digital circuits
64.70.kg Semiconductors
73.61.Le Other inorganic semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system

Kun-Rok Jeon, Byoung-Chul Min, Il-Jae Shin, Chang-Yup Park, Hun-Sung Lee, Young-Hun Jo, and Sung-Chul Shin

Appl. Phys. Lett. 98, 262102 (2011); http://dx.doi.org/10.1063/1.3600787 (3 pages)

Online Publication Date: 27 June 2011

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We report the electrical spin accumulation with enhanced bias voltage dependence in n-type Si, employing a crystalline CoFe/MgO tunnel contact. A sizable spin signal of ∼4.8 kΩμm2, a spin lifetime of ∼155 ps, and a spin diffusion length of ∼220 nm were obtained at 300 K. The spin signal and lifetime obtained in this system show consistent behavior with the temperature variation irrespective of the bias voltage. Notably, the spin signal exhibits nearly symmetric dependence with respect to the bias polarity, which is ascribed to the improved bias dependence of tunnel spin polarization.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.25.-b Spin polarized transport

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

Gun Hwan Kim, Jong Ho Lee, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Kyung Min Kim, Hyung Dong Lee, Seung Wook Ryu, Tae Joo Park, and Cheol Seong Hwang

Appl. Phys. Lett. 98, 262901 (2011); http://dx.doi.org/10.1063/1.3600784 (3 pages)

Online Publication Date: 27 June 2011

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A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.
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73.40.Ns Metal-nonmetal contacts
73.61.-r Electrical properties of specific thin films
68.37.Og High-resolution transmission electron microscopy (HRTEM)
72.60.+g Mixed conductivity and conductivity transitions

Electric-field-induced volume change and room temperature phase stability of (Bi1/2Na1/2)TiO3-x mol. % BaTiO3 piezoceramics

Wook Jo and Jürgen Rödel

Appl. Phys. Lett. 99, 042901 (2011); http://dx.doi.org/10.1063/1.3615675 (3 pages)

Online Publication Date: 25 July 2011

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Phase stability of (1 − x) (Bi1/2Na1/2)TiO3-x BaTiO3 (0 ≤ x ≤ 0.15) under electric field was investigated by measuring volume changes during a bipolar poling cycle. The unique nature of field-dependent phase stability with three distinctive regions is revealed by comparative studies using commercial soft PZT and relaxor PLZT. For x ≤ 0.06 and x ≥ 0.13, similarly with PZT and PLZT, the axial strain expands with the contracting radial strain, but the former results in a remanent volume demonstrating an electric-field-induced phase transition. For 0.08 ≤ x ≤ 0.12, this field-induced phase transition is distinguished by negligible radial contractions implying polarization rotation. A “poling-induced” morphotropic phase boundary forms at x = 0.07.
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77.65.Ly Strain-induced piezoelectric fields

Nanoparticle-based protein detection by optical shift of a resonant microcavity

Miguel A. Santiago-Cordoba, Svetlana V. Boriskina, Frank Vollmer, and Melik C. Demirel

Appl. Phys. Lett. 99, 073701 (2011); http://dx.doi.org/10.1063/1.3599706 (3 pages)

Online Publication Date: 15 August 2011

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We demonstrated a biosensing approach which, for the first time, combines the high sensitivity of whispering gallery modes (WGMs) with a metallic nanoparticle-based assay. We provided a computational model based on generalized Mie theory to explain the higher sensitivity of protein detection. We quantitatively analyzed the binding of a model protein (i.e., Bovine Serum Albumin) to gold nanoparticles from high-Q WGM resonance frequency shifts, and fit the results to an adsorption isotherm, which agrees with the theoretical predictions of a two-component adsorption model.
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87.80.Dj Spectroscopies
87.14.E- Proteins
84.40.Az Waveguides, transmission lines, striplines
42.82.Et Waveguides, couplers, and arrays
42.25.Fx Diffraction and scattering

One-dimensional photonic crystal nanobeam lasers on a flexible substrate

Tsan-Wen Lu, Li-Hsun Chiu, Pin-Tso Lin, and Po-Tsung Lee

Appl. Phys. Lett. 99, 071101 (2011); http://dx.doi.org/10.1063/1.3626592 (3 pages)

Online Publication Date: 15 August 2011

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We demonstrate a one-dimensional (1D) photonic crystal (PhC) nanocavity laser composed of hybrid PhC mirrors on a suspended nanobeam (NB) with very small device footprint of 8.5 × 0.57 μm2. The 0th-order mode lasing action with low threshold of 280 μW is observed. Via the optical glue stamping process, the devices are directly transferred onto a flexible polypropylene substrate. Single mode lasing action with effective threshold of 17 μW is achieved. The robust lasing properties of the device with different bending radii R from ∞ to 2.5 mm are obtained. Via finite-element method, we also theoretically address that the lasing wavelength is almost invariant when R > 1.0 mm. This flexible 1D PhC NB laser will be a good candidate for efficient nanolaser in future flexible photonic integrated circuits with ultrahigh component density.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials
42.79.Bh Lenses, prisms and mirrors
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
02.70.Dh Finite-element and Galerkin methods

Hybrid spintronics and straintronics: A magnetic technology for ultra low energy computing and signal processing

Kuntal Roy, Supriyo Bandyopadhyay, and Jayasimha Atulasimha

Appl. Phys. Lett. 99, 063108 (2011); http://dx.doi.org/10.1063/1.3624900 (3 pages)

Online Publication Date: 9 August 2011

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The authors show that the magnetization of a 2-phase magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the basis of ultralow power computing and signal processing. With appropriate material choice, the energy dissipated per switching event can be reduced to ∼45 kT at room temperature for a switching delay of ∼100 ns and ∼70 kT for a switching delay of ∼10 ns, if the energy barrier separating the two stable magnetization directions is ∼32 kT. Such devices can be powered by harvesting energy exclusively from the environment without the need for a battery.
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85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Theory of plasmonic near-field enhanced absorption in solar cells

N. Lagos, M. M. Sigalas, and E. Lidorikis

Appl. Phys. Lett. 99, 063304 (2011); http://dx.doi.org/10.1063/1.3623759 (3 pages)

Online Publication Date: 11 August 2011

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We derive analytical expressions for the absorption enhancement expected when dilute suspensions of small metallic nanoparticles are inserted inside an organic semiconductor. A comparison with accurate numerical simulations shows excellent agreement for a wide range of volume filling ratios and even in the case of mixing different types of metals. These results are invaluable tools in optimizing the absorption performance of plasmonic thin-film organic solar cells.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells

Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes

Jung Min Lee, Hae Yong Jeong, Kyoung Jin Choi, and Won Il Park

Appl. Phys. Lett. 99, 041115 (2011); http://dx.doi.org/10.1063/1.3595941 (3 pages)

Online Publication Date: 29 July 2011

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We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from ∼ 5.5 to ∼ 0.6Ω/cm2, with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness.
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85.60.Jb Light-emitting devices

Nanobeam photonic crystal cavity light-emitting diodes

Gary Shambat, Bryan Ellis, Jan Petykiewicz, Marie A. Mayer, Tomas Sarmiento, James Harris, Eugene E. Haller, and Jelena Vučković

Appl. Phys. Lett. 99, 071105 (2011); http://dx.doi.org/10.1063/1.3625432 (3 pages)

Online Publication Date: 16 August 2011

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We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.
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85.60.Jb Light-emitting devices
42.55.Tv Photonic crystal lasers and coherent effects

Air stable hybrid inverted tandem solar cell design

Feng Liu and Jean-Michel Nunzi

Appl. Phys. Lett. 99, 063301 (2011); http://dx.doi.org/10.1063/1.3622119 (3 pages)

Online Publication Date: 8 August 2011

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In order to get an air stable solar cell with high open circuit voltage (Voc), we fabricated an inverted tandem solar cell based on hybrid wet chemistry and vacuum thermal deposition techniques. A thin metallic interfacial layer was applied to improve charge recombination and maximize both the fill factor and Voc of the tandem solar cell. A cationic dye doped electron transport layer was used to minimize space charge induced Voc loss. The tandem cell Voc reached 1.02 V, which equals the sum of the two subcells’ Voc. Increase of the metal nanoparticles’ layer thickness reduces the short circuit current density of the tandem owing to increasing light extinction. Our tandem cell design offers superior air stability due to additional encapsulation effect from top metal oxide layers. It retains about 80% of its original efficiency after storage in air for three months.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells

Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1−x)O3 thin film by high oxygen-pressure processing

X. D. Zhang, X. J. Meng, J. L. Sun, T. Lin, and J. H. Chu

Appl. Phys. Lett. 86, 252902 (2005); http://dx.doi.org/10.1063/1.1952567 (3 pages)

Online Publication Date: 14 June 2005

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A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(ZrxTi1−x)O3 (PZT) thin film was fabricated at temperature as low as 400 °C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50/50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with Pr and Ec of 45 μC/cm2 and 121 kV/cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized Pr and Ec are of 26 μC/cm2 and 93 kV/cm under an applied electric field of 400 kV/cm.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Cd Deposition by sputtering
77.80.Dj Domain structure; hysteresis
81.40.Vw Pressure treatment
62.50.-p High-pressure effects in solids and liquids

Transparent, near-infrared organic photovoltaic solar cells for window and energy-scavenging applications

Richard R. Lunt and Vladimir Bulovic

Appl. Phys. Lett. 98, 113305 (2011); http://dx.doi.org/10.1063/1.3567516 (3 pages)

Online Publication Date: 17 March 2011

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We fabricate near-infrared absorbing organic photovoltaics that are highly transparent to visible light. By optimizing near-infrared optical-interference, we demonstrate power efficiencies of 1.3±0.1% with simultaneous average visible transmission of >65%. Subsequent incorporation of near-infrared distributed-Bragg-reflector mirrors leads to an increase in the efficiency to 1.7±0.1%, approaching the 2.4±0.2% efficiency of the opaque cell, while maintaining high visible-transparency of >55%. Finally, we demonstrate that a series-integrated array of these transparent cells is capable of powering electronic devices under near-ambient lighting. This architecture suggests strategies for high-efficiency power-generating windows and highlights an application uniquely benefiting from excitonic electronics.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors
42.79.Ci Filters, zone plates, and polarizers

Strain control spin reorientation transition in DyFeO3/SrTiO3 epitaxial film

T.-Y. Khim, M. J. Eom, J. S. Kim, B.-G. Park, J.-Y. Kim, and J.-H. Park

Appl. Phys. Lett. 99, 072501 (2011); http://dx.doi.org/10.1063/1.3623756 (3 pages)

Online Publication Date: 15 August 2011

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We grew single phase DyFeO3 (110) epitaxial films on SrTiO3(001) substrates in the layer-by-layer mode using the pulsed laser deposition. The Fe L2,3-edge x-ray magnetic linear dichroism and magnetic hysteresis confirm that the film shows the spin-canted antiferromagnetism at room temperature and undergoes the spin reorientation transition (SRT) upon cooling as the bulk. The SRT temperature is significantly reduced in the thin films due to the compressive strain and becomes below 5 K for the thickness ≲ 50 Å.
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75.30.Ds Spin waves
75.30.Wx Spin crossover
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.50.Ee Antiferromagnetics
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition

Role of oxygen-bonds in the degradation process of phosphorescent organic light emitting diodes

Ines Rabelo de Moraes, Sebastian Scholz, Björn Lüssem, and Karl Leo

Appl. Phys. Lett. 99, 053302 (2011); http://dx.doi.org/10.1063/1.3617459 (3 pages)

Online Publication Date: 1 August 2011

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For improving the lifetime of organic light emitting diodes (OLEDs), it is essential to understand the chemical reaction pathways involved in the degradation process of these devices. Using the laser desorption/ionization time-of-flight mass spectrometry (LDI-TOF-MS) technique, an OLED based on the phosphorescent emitter tris(phenylpyridine)iridium (Ir(ppy)3) was investigated. We show that the chemical dissociation reaction of the Ir(ppy)3 molecule and an additional complexation of its fragments with the used hole blocking material 4,7-diphenyl-1,10-phenanthroline is the main intrinsic degradation mechanism. This finding underlines the exciton induced dissociation mechanism of phosphorescent emitters, even at emitters without any metal-oxygen-bonds in the ligand system.
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85.60.Jb Light-emitting devices

Highly efficient semitransparent tandem organic solar cells with complementary absorber materials

Jan Meiss, Torben Menke, Karl Leo, Christian Uhrich, Wolf-Michael Gnehr, Stefan Sonntag, Martin Pfeiffer, and Moritz Riede

Appl. Phys. Lett. 99, 043301 (2011); http://dx.doi.org/10.1063/1.3610551 (3 pages)

Online Publication Date: 25 July 2011

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We present highly efficient, semitransparent small molecule organic solar cells. The devices employ an indium tin oxide-free top contact, consisting of thin metal films. An additional organic layer is used to enhance light outcoupling. The solar cell incorporates two stacked subcells, each containing a donor:acceptor bulk heterojunction. The two subcells have complementary absorbers, with separate blue (C60), red (fluorinated zinc phthalocyanine), and green (dicyanovinyl oligothiophene derivative) absorbing molecules. A power conversion efficiency of 4.9 ± 0.2% is obtained for the device having an average transmission of 24% in the visible range.
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88.40.jr Organic photovoltaics
42.79.Ek Solar collectors and concentrators
88.40.hj Efficiency and performance of solar cells

On-a-chip surface plasmon tweezers

H. M. K. Wong, M. Righini, J. C. Gates, P. G. R. Smith, V. Pruneri, and R. Quidant

Appl. Phys. Lett. 99, 061107 (2011); http://dx.doi.org/10.1063/1.3625936 (3 pages)

Online Publication Date: 11 August 2011

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We report on an integrated optical trapping platform operated by simple fiber coupling. The system consists of a dielectric channel optical waveguide decorated with an array of gold micro-pads. Through a suitable engineering of the waveguide mode, we achieve light coupling to the surface plasmon resonance of the gold pads that act as individual plasmonic traps. We demonstrate parallel trapping of both micrometer size polystyrene beads and yeast cells at predetermined locations on the chip with only 20 mW total incident laser power.
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42.82.Et Waveguides, couplers, and arrays
42.50.Wk Mechanical effects of light on material media, microstructures and particles

On the optical polarization properties of semipolar InGaN quantum wells

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, and M. Kneissl

Appl. Phys. Lett. 99, 051103 (2011); http://dx.doi.org/10.1063/1.3618676 (3 pages)

Online Publication Date: 2 August 2011

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Polarized photoluminescence of strained quantum wells grown on c–plane, semipolar (10math2), (11math2), (10math1), (20math1) planes, and nonpolar GaN substrates was studied experimentally and in theory. The observed optical polarization switching between the substrate orientations (10math2) and (11math2) is in accordance with our general model of polarization switching, based on a math·math model of arbitrary substrate orientation. Spectrally resolved measurements of the polarization degree stemming from (10math2) samples show that the maximum of the polarization degree is red–shifted with respect to the maximum of the photoluminescence intensity. We ascribe this effect to an increased polarization of the transitions for higher indium content.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
78.55.Cr III-V semiconductors

Organic photovoltaic power conversion efficiency improved by AC electric field alignment during fabrication

Cindy X. Zhao, Xizu Wang, Wenjin Zeng, Zhi K. Chen, Beng S. Ong, Kewei Wang, Lulu Deng, and Gu Xu

Appl. Phys. Lett. 99, 053305 (2011); http://dx.doi.org/10.1063/1.3623477 (3 pages)

Online Publication Date: 4 August 2011

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Ultra-low frequency AC field was employed to align p/n polymers during organic photovoltaic device fabrication. The resulting devices show 15% increase in power conversion efficiency and four-fold increase in parallel resistance. Supported by the transmission electron microscopy and atomic force microscopy images, the performance enhancement is attributed to the optimized morphology and enlarged p/n interface by AC field, which is more effective than DC, possibly explained by the argument of better mixing via back-and-forth shaking than a single swing.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells

An organic p-i-n homojunction as ultra violet light emitting diode and visible-blind photodiode in one

S. Hamwi, T. Riedl, and W. Kowalsky

Appl. Phys. Lett. 99, 053301 (2011); http://dx.doi.org/10.1063/1.3617427 (3 pages)

Online Publication Date: 1 August 2011

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Organic p-i-n homojunctions that function both as ultra violet light emitting diode (peak wavelengths around 375 nm and 415 nm) and visible-blind photodiode are reported. They are considered as the organic counterpart to what has exclusively been known from inorganic semiconductors, as yet. The diodes are based on the ambipolar material 4,4′-Bis(carbazol-9-yl)-biphenyl (CBP) which is p- and n-type doped adjacent to the electrodes. We study the emission characteristics of the p-i-n homojunction for varied doping concentrations and subsequently focus on its characteristics as photodiode. A superlinear relation of photocurrent and incident light intensity is found and attributed to an intensity-dependent photoconductivity.
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85.60.Dw Photodiodes; phototransistors; photoresistors
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