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High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
Wenzhong Bao, Xinghan Cai, Dohun Kim, Karthik Sridhara, and Michael S. Fuhrer
This paper reports on the fabrication and properties of the MoS2 field effect mobility and its dependence on substrate (SiO2 and PMMA), MoS2 thickness, and PMMA dielectric overlayer. The research concludes that strong dielectric effects on mobility for MoS2 devices on PMMA imply a dominance of long-range disorder, while the absence of such effects for MoS2 on SiO2 implies a dominance of short-range disorder at the SiO2 interface due to chemical bonding or surface roughness.
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