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Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
Yu-Ting Chen, Ting-Chang Chang, Jheng-Jie Huang, Hsueh-Chih Tseng, Po-Chun Yang, Ann-Kuo Chu, Jyun-Bao Yang, Hui-Chun Huang, Der-Shin Gan, Ming-Jinn Tsai, and Simon M. Sze
This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film.
Appl. Phys. Lett. 102, 043508 (2013) | HTML | PDF
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