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Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures
Shota Izumi, Mahmoud Shaban, Nathaporn Promros, Keita Nomoto, and Tsuyoshi Yoshitake
β-FeSi2 has been proposed as a promising material for optoelectronic applications within Si microelectronics technology. This paper presents the photodetection properties and noise performance of n-type β-FeSi2/p-type Si heterojunction at a temperature range of 300−50 K.
Appl. Phys. Lett. 102, 032107 (2013) | HTML | PDF
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