Detecting p-type conduction in Ba-doped InN

Q. Y. Xie, W. M. Xie, J. L. Wang, H. P. Zhu, J. H. Yang, L. Sun, and X. S. Wu

The buried p-type conduction is demonstrated in InN with Ba ion implantation dose increases up to 1 × 10¹⁵ ions/cm⁻². The in-plane lattice parameter increases by about 1.2% deep in the film due to larger Ba replacing smaller indium (In).

Appl. Phys. Lett. 102, 042109 (2013) | HTML | PDF

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

Yu-Ting Chen, Ting-Chang Chang, Jheng-Jie Huang, Hsueh-Chih Tseng, Po-Chun Yang, Ann-Kuo Chu, Jyun-Bao Yang, Hui-Chun Huang, Der-Shin Gan, Ming-Jinn Tsai, and Simon M. Sze

This report compares Mo-doped and undoped SiO₂ thin films of a similar thickness as well as MoOx. The Mo-doped SiO₂ film exhibited switching behavior after the forming process, unlike the undoped SiO₂ film.

Appl. Phys. Lett. 102, 043508 (2013) | HTML | PDF

Analysis of perturbations in the lateral far-field of blue InGaN laser diodes

F. Kopp, A. Lell, C. Eichler, U. T. Schwarz, and U. Strauss

The origin of perturbations in the Gaussian-shaped lateral far-field of blue InGaN laser diodes is explored. Near-field measurements reveal that small stray light intensity peaks beside the ridge waveguide exist. In order to prove quantitatively the impact of this stray light on the far field, an exemplary beam propagation method simulation is performed.

Appl. Phys. Lett. 102, 043504 (2013) | HTML | PDF

Hysteretic control of organic conductance due to remanent magnetic fringe fields

F. Macià, F. Wang, N. J. Harmon, M. Wohlgenannt, A. D. Kent, and M. E. Flatté

Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq₃, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film.

Appl. Phys. Lett. 102, 042408 (2013) | HTML | PDF

Near-infrared photodetection of β-FeSi₂/Si heterojunction photodiodes at low temperatures

Shota Izumi, Mahmoud Shaban, Nathaporn Promros, Keita Nomoto, and Tsuyoshi Yoshitake

β-FeSi₂ has been proposed as a promising material for optoelectronic applications within Si microelectronics technology. This paper presents the photodetection properties and noise performance of n-type β-FeSi₂/p-type Si heterojunction at a temperature range of 300−50 K.

Appl. Phys. Lett. 102, 032107 (2013) | HTML | PDF

High mobility ambipolar MoS₂ field-effect transistors: Substrate and dielectric effects

Wenzhong Bao, Xinghan Cai, Dohun Kim, Karthik Sridhara, and Michael S. Fuhrer

This paper reports on the fabrication and properties of the MoS₂ field effect mobility and its dependence on substrate (SiO₂ and PMMA), MoS₂ thickness, and PMMA dielectric overlayer. The research concludes that strong dielectric effects on mobility for MoS₂ devices on PMMA imply a dominance of long-range disorder, while the absence of such effects for MoS₂ on SiO₂ implies a dominance of short-range disorder at the SiO2 interface due to chemical bonding or surface roughness.

Appl. Phys. Lett. 102, 042104 (2013) | HTML | PDF

A Light Emitting Device Made from Thin Zirconium-doped Hafnium Oxide High-k Dielectric Film with or without an Embedded Nanocrystal Layer

Yue Kuo and Chi-Chou Lin

This paper studies the properties of a solid state light emitting device composed of a 10 nm thickness zirconium-doped hafnium oxide high-k gate dielectric with or without an embedded nanocrystalline ZnO layer. The advantage of this type of solid state LED is its simplicity, low cost and IC compatible process, and that it can be fabricated with various types of dielectric and embedded nanocrystaline materials, making it an excellent candidate for a variety of applications.

Appl. Phys. Lett. 102, 031117 (2013) | HTML | PDF

Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors

W. Pan, J. F. Klem, J. K. Kim, M. Thalakulam, M. J. Cich, and S. K. Lyo

The authors have fabricated a field-effect transistor of inverted type-II InAs/GaSb heterostructure, a two-dimensional topological insulator. Electronic transport measurements were carried out at temperatures down to 25 mK and in magnetic fields up to 30 Tesla. Three main experimental results were obtained: (1) well-developed integer quantum Hall effect states at Landau level fillings v=1, 2 in the hole regime and v=1, 2, 3… in the electron regime, (2) a chaotic quantum transport behavior at extremely high magnetic fields around the charge neutrality point (CNP), and (3) a circular conductivity law around the CNP. Furthermore, they are able to deduce the values of electron and hole densities at the charge

Appl. Phys. Lett. 102, 033504 (2013) | HTML | PDF

Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure

Jeffrey C. K. Lam, Maggie Y. M. Huang, Tsu Hau Ng, Mohammed Khalid Bin Dawood, Fan Zhang, Anyan Du, Handong Sun, Zexiang Shen, and Zhihong Mai

This letter details observations on degradation behavior found in Cu/ultra-low-k damascene structures and discusses their implication for ultra-low-k 4 technology.

Appl. Phys. Lett. 102, 022908 (2013) | HTML | PDF

Gate voltage induced topological phase transition in hexagonal boron-nitride bilayers

Xuechao Zhai and Guojun Jin

This paper outlines a way to reduce the energy gaps of the two stable stacking Boron Nitride bilayers by applying an interlayer bias voltage. The results of this work aim at facilitating potential applications of Boron Nitride bilayers in electronics and spintronics.

Appl. Phys. Lett. 102, 023104 (2013) | HTML | PDF