Research Highlights Archive
A Light Emitting Device Made from Thin Zirconium-doped Hafnium Oxide High-k Dielectric Film with or without an Embedded Nanocrystal Layer
Yue Kuo and Chi-Chou Lin
This paper studies the properties of a solid state light emitting device composed of a 10 nm thickness zirconium-doped hafnium oxide high-k gate dielectric with or without an embedded nanocrystalline ZnO layer. The advantage of this type of solid state LED is its simplicity, low cost and IC compatible process, and that it can be fabricated with various types of dielectric and embedded nanocrystaline materials, making it an excellent candidate for a variety of applications.
Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors
W. Pan, J. F. Klem, J. K. Kim, M. Thalakulam, M. J. Cich, and S. K. Lyo
The authors have fabricated a field-effect transistor of inverted type-II InAs/GaSb heterostructure, a two-dimensional topological insulator. Electronic transport measurements were carried out at temperatures down to 25 mK and in magnetic fields up to 30 Tesla. Three main experimental results were obtained: (1) well-developed integer quantum Hall effect states at Landau level fillings v=1, 2 in the hole regime and v=1, 2, 3… in the electron regime, (2) a chaotic quantum transport behavior at extremely high magnetic fields around the charge neutrality point (CNP), and (3) a circular conductivity law around the CNP. Furthermore, they are able to deduce the values of electron and hole densities at the charge
Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure
Jeffrey C. K. Lam, Maggie Y. M. Huang, Tsu Hau Ng, Mohammed Khalid Bin Dawood, Fan Zhang, Anyan Du, Handong Sun, Zexiang Shen, and Zhihong Mai
This letter details observations on degradation behavior found in Cu/ultra-low-k damascene structures and discusses their implication for ultra-low-k 4 technology.
Gate voltage induced topological phase transition in hexagonal boron-nitride bilayers
Xuechao Zhai and Guojun Jin
This paper outlines a way to reduce the energy gaps of the two stable stacking Boron Nitride bilayers by applying an interlayer bias voltage. The results of this work aim at facilitating potential applications of Boron Nitride bilayers in electronics and spintronics.
Microscopic magnetic structuring of a spin-wave waveguide by ion implantation in a Ni81Fe19 layer
Björn Obry, Thomas Meyer, Philipp Pirro, Thomas Brächer, Bert Lägel, Julia Osten, Thomas Strache, Jürgen Fassbender, and Burkard Hillebrands
The letter presents a purely magnetic microscopic structuring of spin-wave waveguides by localized ion implantation in a Ni81Fe19 ﬁlm. The results of this work show that the fabrication of spin-wave waveguides by means of localized ion implantation, provides potential for the manipulation of various waveguide properties and thus pioneers applications for spin-wave conduits in the ﬁeld of magnon spintronics.
Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
Jian Zhang, Hui Yang, Qi-long Zhang, Shurong Dong, and J. K. Luo
This paper reports Bipolar resistive switching behaviors in undoped ZnO polycrystalline films deposited by a remote plasma-enhanced ALD (PEALD) method. Reversible resistive switching behavior of the devices has been obtained by electrically induced resistive switching between the high and low resistance states. The resistance ratio of the high to low resistance states is larger than 103, and the resistances at both the states remain unchanged for the test up to 104s, demonstrated the excellent potential of the PEALD-ZnO films for 3D ReRAM applications.
Three-dimensional micro electromechanical system piezoelectric ultrasound transducer
Arman Hajati, Dimitre Latev, Deane Gardner, Azadeh Hajati, Darren Imai, Marc Torrey, and Martin Schoeppler
This paper presents a micro-machined ultrasound transducer technology named Clarinet™. This design overcomes the various technical issues of fabricating thin-film piezoelectric MEMS structures to provide high sensitivity, adjustable wide-bandwidth frequency response, low transmit voltage compatible with ordinary integrated circuitry, low electrical impedance well matched to coaxial cabling, and intrinsic acoustic impedance match to water.
Increasing recoverable energy storage in electroceramic capacitors using “dead-layer” engineering
M. McMillen, A. M. Douglas, T. M. Correia, P. M. Weaver, M. G. Cain, and J. M. Gregg
This paper investigates augmenting and enhancing recoverable energy densities by deliberately engineering strong interfacial capacitance effects in ultra-thin film capacitors of BFST by the addition of an interfacial “dead-layer”. This configuration is protected from breakdown failure by a ferroelectric layer which experiences a much lower electric field.
Culturing photosynthetic bacteria through surface plasmon resonance
Matthew D. Ooms, Lauren Bajin, and David Sinton
Experiments conducted using cells of Synechococcus elongates cyanobacteria demonstrate that surface plasmon resonance on a planar surface can also be used as a means of achieving targeted light delivery to a photosynthetic biofilm.
Quantitative self-calibrating lock-in carrierographic lifetime imaging of silicon wafers
Qiming Sun, Alexander Melnikov, and Andreas Mandelis
The paper introduces lock-in carrierography as a self-calibrating lifetime imaging methodology of silicon wafers, using a p-type crystalline silicon wafer with thickness 520 μm. For comparison and verification the authors used conventional Laser-induced infrared photocarrier radiometry.